Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structure
A capacitor includes an object or a substrate including an insulation layer having an opening, an electrode structure having conductive patterns, a dielectric layer and an upper electrode. The electrode structure may have a first conductive pattern including metal and a second conductive pattern including metal oxide generated from the first conductive pattern. The first conductive pattern may fill the opening and may protrude over the insulation layer. The second conductive pattern may extend from the first conductive pattern. The electrode structure may additionally include a third conductive pattern disposed on the second conductive pattern. The capacitor including the electrode structure may ensure improved structural stability and electrical characteristics.
1. A method of manufacturing a capacitor, comprising:
forming an insulation layer on a substrate;
forming a first conductive pattern including metal buried in the insulation layer;
forming a second conductive pattern including metal oxide generated from the first conductive pattern;
forming a third conductive pattern on the second conductive pattern;
forming a dielectric layer on the second and the third conductive patterns; and
forming an upper electrode on the dielectric layer;
forming a first sacrificial layer on the insulation layer before forming the second conductive pattern;
forming a second sacrificial layer on the first sacrificial layer to cover the second conductive pattern;
forming an opening by etching the second sacrificial layer, the opening exposing the second conductive pattern; and
forming a third conductive pattern on the second conductive pattern and a sidewall of the opening.
2. The method of claim 1 , wherein forming the third conductive pattern further comprises forming a supporting member between adjacent elements of the third conductive patterns.