Lead frame and semiconductor device
A lead frame for a resin-seal type semiconductor device, which includes a semiconductor element having an electrode, a bonding wire connected to the electrode of the semiconductor element, and a sealing resin covering and sealing the semiconductor element and the bonding wire. The lead frame includes a substrate frame, a four-layer plating, and a three-layer plating. The substrate frame include leads, a connection region, which is sealed by the sealing resin and connected to the bonding wire, and an exposed region, which is not sealed by the sealing resin. A four-layer plating is applied to a portion of the substrate frame that is to be connected to the bonding wire and sealed by the sealing resin. A three-layer plating is applied to an exposed region of the substrate frame that is exposed from the sealing resin.
1. A lead frame for a resin-seal type semiconductor device, wherein the semiconductor device includes a semiconductor element having an electrode, a bonding wire connected to the electrode of the semiconductor element, and a sealing resin covering and sealing the semiconductor element and the bonding wire, the lead frame comprising:
a substrate frame including a plurality of leads;
a four-layer plating applied to a portion of the substrate frame that is to be connected to the bonding wire and sealed by the sealing resin, wherein the four-layer plating includes a first plating layer, which is formed from Ni or an Ni alloy, a second plating layer, which is formed from Pd or a Pd alloy, a third plating layer, which is formed from Ag or an Ag alloy, and a fourth plating layer, which is formed from Au or an Au alloy, sequentially laminated in this order on the portion of the substrate frame; and
a three-layer plating applied to an exposed region of the substrate frame that is exposed from the sealing resin, wherein the three-layer plating includes the first plating layer, the second plating layer, and the fourth plating layer sequentially laminated in this order on the exposed region of the substrate frame.
2. The lead frame according to claim 1 , wherein the substrate frame includes a die pad onto which the semiconductor element is mounted.
3. The lead frame according to claim 1 , wherein the four-layer plating is applied entirely to a sealed region of the substrate frame that is to be sealed by the sealing resin.
4. The lead frame according to claim 1 , wherein the third plating layer has a thickness of 0.05 μm or greater to 3.5 μm or less.
5. The lead frame according to claim 1 , wherein
each of the plurality of leads includes an outer end and an inner end,
the three-layer plating is applied to the outer ends of the leads, and
the four-layer plating is applied to the inner ends of the leads.
6. A semiconductor device comprising:
the lead frame according to claim 1 ;
the semiconductor element;
the bonding wire electrically connecting the electrode of the semiconductor element and the four-layer plating; and
the sealing resin that covers and seals the semiconductor element, the bonding wire, and parts of the leads.
7. The lead frame according to claim 1 , wherein the third plating layer and the fourth plating of the four-layer plating decrease a hardness of a surface layer of the four-layer plating of at least one of the plurality of leads to induce a plastic deformation at the surface layer of the at least one of the plurality of leads.
8. The lead frame according to claim 7 , wherein the plastic deformation suppresses slipping of a Cu wire to be bonded to the surface layer of the at least one of the plurality of leads.
9. The lead frame according to claim 8 , wherein the four-layer plating increases bonding reliability of the Cu wire to the surface layer of the at least one of the plurality of leads.