Semiconductor light-emitting device
There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
1. A semiconductor light-emitting device comprising:
one or more of surface-emitting semiconductor light-emitting sections and one or more semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light,
wherein the semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate, the semiconductor light-emitting device further comprising:
a circuit for adjusting an offset of a detection voltage transmitted from each of the semiconductor temperature detecting sections.
2. The semiconductor light-emitting device according to claim 1 , wherein
the semiconductor light-emitting sections and the semiconductor temperature detecting sections have the same configuration of the PN junction or the PIN junction.
3. The semiconductor light-emitting device according to claim 2 , wherein
both of the semiconductor light-emitting sections and the semiconductor temperature detecting sections have a laminate configuration including a first multilayer reflective mirror, an active layer and a second multilayer reflective minor in this order.
4. The semiconductor light-emitting device according to claim 1 , wherein
the semiconductor light-emitting sections and the semiconductor temperature detecting sections have the same laminate configuration.
5. The semiconductor light-emitting device according to claim 1 , wherein
both of the semiconductor light-emitting sections and the semiconductor temperature detecting sections are formed on the semiconductor substrate as a growth substrate.
6. The semiconductor light-emitting device according to claim 1 , wherein
the semiconductor temperature detecting sections each have a low-reflectivity layer on a top surface thereof.
7. The semiconductor light-emitting device according to claim 1 , wherein
the semiconductor temperature detecting sections each include a metal layer on a whole top surface thereof.
8. A semiconductor light-emitting device comprising:
a plurality of surface-emitting semiconductor light-emitting sections and a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside, and
a circuit for adjusting an offset of a detection voltage transmitted from each of the semiconductor temperature detecting sections,
wherein the semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.