Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer
In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.
1. A bulk acoustic wave (BAW) resonator structure, comprising:
a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode;
a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and
a single-material acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator, the single-material acoustic coupling layer comprising an inhomogeneous acoustic property across a thickness of the acoustic coupling layer, wherein the single-material acoustic coupling layer has an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm.
2. A BAW resonator structure as claimed in claim 1 , wherein the single-material acoustic coupling layer comprises carbon-doped silicon oxide (SiOCH).
3. A BAW resonator structure as claimed in claim 1 , wherein the single-material acoustic coupling layer comprises one of silicon oxynitride (SiON), boron doped silicate glass (BSG), and phosphosilicate glass (PSG).
4. A BAW resonator structure as claimed in claim 1 , wherein the acoustic impedance is less than approximately 5.0 MRayls and greater than approximately 1.0 MRayls.
5. A BAW resonator structure as claimed in claim 1 , wherein the acoustic attenuation is greater than approximately 10 dB/cm.
6. A BAW resonator structure as claimed in claim 1 , wherein the single-material acoustic coupling layer comprises a single layer.
7. A BAW resonator structure as claimed in claim 1 , further comprising an acoustic coupling structure disposed between the first and second BAW resonators, the acoustic coupling structure comprising:
the single-material acoustic coupling layer; and
another acoustic coupling layer.
8. A BAW resonator structure as claimed in claim 1 , further comprising:
a first adhesion layer disposed between the single-material acoustic coupling layer and the first BAW resonator; and
a second adhesion layer disposed between the single-material acoustic coupling layer and the second BAW resonator.
9. A BAW resonator structure as claimed in claim 8 , wherein the first adhesion layer is silicon-carbide (SiC).
10. A BAW resonator structure as claimed in claim 8 , wherein the second adhesion layer is silicon-carbide (SiC).
11. A BAW resonator structure as claimed in claim 1 , wherein the BAW resonator structure comprises a coupled resonator filter (CRF).
12. A BAW resonator structure as claimed in claim 1 , the acoustic impedance varies by a factor of approximately 2:1 over the thickness of the single-material acoustic coupling layer.
13. A BAW resonator structure as claimed in claim 1 , wherein the acoustic attenuation is greater than approximately 10 dB/cm and less than approximately 1000 dB/cm.