Multiferroic nanoscale thin film materials, method of its facile syntheses and magnetoelectric coupling at room temperature
Methods of producing a multiferroic thin film material. The method includes the steps of providing a multiferroic precursor solution, subjecting the precursor solution to spin casting to produce a spin cast film, and heating the spin cast film. The precursor solution may include Bi(NO 3 ) 3 .5H 2 O and Fe(NO 3 ) 3 .9H 2 O in ethylene glycol to produce a bismuth ferrite film. Further, the thin film may be utilized in varied technological areas, including memory devices for information storage.
1. A method of producing a multiferroic thin film material, said method comprising the following steps:
a. providing a precursor solution including a Bismuth solution and an Iron Nitrate solution;
b. spin casting the precursor solution;
c. heating the spin cast precursor solution such that the Bismuth solution and the Iron Nitrate solution react to form a multiferroic Bismuth Ferrite (BiFeO 3 ) film;
d. forming the BiFeO 3 nanocrystals in a perovskite structure having Fe atoms located at B-sites in the perovskite structure;
e. substituting magnetic metal atoms having a higher valency than Fe for the Fe atoms located at the B-sites in the perovskite structure, to maintain neutrality and insulation of the BiFeO 3 film; and
f. wherein the BiFeO 3 film exhibits as substantially uniform arrangement of BiFeO 3 nanocrystals capable of magnetoelectric coupling at room temperature.
2. The method of claim 1 , wherein the Bismuth and Iron Nitrate solution comprises Bi(NO 3 ) 3 .5H 2 O and Fe(NO 3 ) 3 .9H 2 O, respectively.
3. The method of claim 2 , wherein Bi(NO 3 ) 3 .5H 2 O and Fe(NO 3 ) 3 .9H 2 O are present in a 1:1 molar ratio.
4. The method of claim 2 , wherein the Bi(NO 3 ) 3 .5H 2 O and Fe(NO 3 ) 3 .9H 2 O are dissolved in ethylene glycol.
5. The method of claim 1 , wherein the spin cast precursor solution is heated in step (c) to about 600° C.
6. The method of claim 5 , wherein the nanocrystals are about 200 nm in diameter and about 45 nm in height.
7. The method as recited in claim 1 , further comprising the step of regulating the electrical field polarization of the BiFeO 3 nanocrystals in response to an applied magnetic field.
8. The method as recited in claim 1 wherein the BiFeO 3 nanocrystals are subject to magnetic field induced electric polarization at room temperature.
9. The method as recited in claim 1 , further comprising the step of regulating the ferromagnetic polarization of the BiFeO 3 nanocrystals in response to an applied electrical field.
10. The method as recited in claim 1 wherein the BiFeO 3 nanocrystals are subject to electrical field control of the ferromagnetic polarization of the nanocrystals.
11. The method as recited claim 1 wherein the ferromagnetic characteristics of the nanocrystals are subject to electrical field control, and electrical field characteristics of the nanocrystals are subject to magnetic field control.
12. The method as recited in claim 1 wherein the electrical field characteristics of the nanocrystals are subject to magnetic field control.
13. The method as recited in claim 1 wherein the magnetic field characteristics of the nanocrystals are subject to electrical field control.
14. The method a recited in claim 1 wherein the higher valency magnetic metal atoms are substituted for about 1% to about 30% of the Fe atoms located at the B-sites.
15. The method as recited in claim 14 wherein the higher valency magnetic metal atoms are selected from the group consisting of V, Nb, Ta, W, Ti, Zr, and Hf.