Sealing structure and method of manufacturing the same
A method of manufacturing a structure ( 1100 ), the method comprising forming a cap element ( 401 ) on a substrate ( 101 ), removing material ( 103 ) of the substrate ( 101 ) below the cap element ( 401 ) to thereby form a gap ( 802 ) between the cap element ( 401 ) and the substrate ( 101 ), and rearranging material of the cap element ( 401 ) and/or of the substrate ( 101 ) to thereby merge the cap element ( 401 ) and the substrate ( 101 ) to bridge the gap ( 802 ).
1. A method of manufacturing a structure, the method comprising
forming a cap element on a substrate;
removing material in an adjoining region between the substrate and the cap element to thereby form a gap between the cap element and the substrates; and
rearranging material of the cap element or of the substrate to thereby weld the cap element to the substrate and bridge the gap.
2. The method according to claim 1 , wherein the material is rearranged by thermally annealing the structure.
3. The method according to claim 2 , wherein thermally annealing the structure comprises treating the structure in a hydrogen atmosphere.
4. The method according to claim 2 , wherein thermally annealing the structure comprises heating the structure to at least 900° C.
5. The method according to claim 2 , wherein thermally annealing the structure comprises treating the structure in a low pressure atmosphere, particularly in an atmosphere with a pressure of not more than 10 Torr.
6. The method according to claim 1 , wherein the substrate comprises a body and a first sacrificial material located on the body, wherein the cap element is formed on the first sacrificial material, and wherein the first sacrificial material is subsequently removed to form the gap.
7. The method according to claim 1 , further comprising forming a functional component sealed within the cap elements.
8. The method according to claim 7 , further comprising forming a second sacrificial element between the functional component and the cap element, and subsequently removing the second sacrificial element to thereby allow a motion, particularly an oscillation, of the functional component within the cap element.
9. A method of manufacturing a structure comprising:
forming a cap element on a substrate;
removing material in an adjoining region between the substrate and the cap element to thereby form a gap between the cap element and the substrates;
rearranging material of the cap element or of the substrate to thereby merge the cap element and the substrate to bridge the gap;
forming a functional component sealed within the cap element;
removing material in an adjoining region between the substrate and the functional component to thereby form a further gap between the substrate and the functional component; and
rearranging material of the substrate or of the functional component to thereby merge the substrate and the functional component to bridge the further gap.
10. The method according to claim 9 , further comprising removing material in the adjoining region between the substrate and the functional component simultaneously with removing material in the adjoining region between the substrate and the cap element.
11. The method according to claim 9 , further comprising rearranging material of the substrate or of the functional component simultaneously with rearranging material of the cap element and/or of the substrate.
12. The method according to claim 1 , further comprising forming a protection layer on a part of the substrate or on a part of the cap element before removing material in the adjoining region to thereby prevent portions covered by the protection layer from being removed.
13. The method according to claim 1 , wherein material of the substrate below the cap element is removed by etching, particularly by at least one of a group consisting of wet etching and vapor etching.
14. The method according to claim 1 , wherein the cap element is formed essentially U-shaped.
15. The method according to claim 1 , wherein the substrate and the cap element comprise a semiconductor, particularly silicon.
16. The method according to claim 1 , carried out in CMOS technology, particularly in a front end procedure of CMOS technology.
17. The method of claim 1 , wherein:
the material of the cap element has a first crystalline lattice structure;
the material of the substrate has a second crystalline lattice structure; and
the rearranging of the material joins at least one lattice point of the first crystalline lattice structure with at least one lattice point of the second crystalline lattice structure.
18. The method of claim 9 , wherein the cap element is welded to the substrate.