Method for manufacturing semiconductor device
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the substrate and the gate electrode;
forming an oxide semiconductor layer over the gate insulating film by sputtering;
performing a heat treatment on the oxide semiconductor layer to reduce a hydrogen concentration of the oxide semiconductor layer;
supplying oxygen into the oxide semiconductor layer after performing the heat treatment; and
forming a source electrode and a drain electrode over the oxide semiconductor layer.
2. The method according to claim 1 , wherein the heat treatment is performed so as to remove moisture in the oxide semiconductor layer.
3. The method according to claim 1 , wherein the heat treatment is performed for conducting a dehydration treatment and a dehydrogenation treatment of the oxide semiconductor layer.
4. The method according to claim 1 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed by cooling treatment in an oxygen atmosphere.
5. The method according to claim 1 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed under an air atmosphere.
6. The method according to claim 1 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed under an oxygen atmosphere or oxygen nitrogen atmosphere.
7. The method according to claim 1 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed so as to fill an oxygen deficiency in the oxide semiconductor layer.
8. The method according to claim 1 , wherein the gate insulating film has a stacked structure using at least one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, an aluminum nitride oxide layer, and a hafnium oxide layer.
9. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the substrate and the gate electrode;
forming an oxide semiconductor layer over the gate insulating film by sputtering;
performing a heat treatment on the oxide semiconductor layer to reduce a hydrogen concentration of the oxide semiconductor layer;
supplying oxygen into the oxide semiconductor layer after performing the heat treatment;
forming a source electrode and a drain electrode over the oxide semiconductor layer; and
performing a plasma treatment after forming the source electrode and the drain electrode.
10. The method according to claim 9 , wherein the heat treatment is performed so as to remove moisture in the oxide semiconductor layer.
11. The method according to claim 9 , wherein the heat treatment is performed for conducting a dehydration treatment and a dehydrogenation treatment of the oxide semiconductor layer.
12. The method according to claim 9 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed by cooling treatment in an oxygen atmosphere.
13. The method according to claim 9 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed under an air atmosphere.
14. The method according to claim 9 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed under an oxygen atmosphere or oxygen nitrogen atmosphere.
15. The method according to claim 9 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed so as to fill an oxygen deficiency in the oxide semiconductor layer.
16. The method according to claim 9 , wherein the gate insulating film has a stacked structure using at least one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, an aluminum nitride oxide layer, and a hafnium oxide layer.
17. The method according to claim 9 , wherein an N 2 O gas is used for performing the plasma treatment.
18. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the substrate and the gate electrode;
forming an oxide semiconductor layer over the gate insulating film by sputtering;
performing a first heat treatment on the oxide semiconductor layer to reduce a hydrogen concentration of the oxide semiconductor layer;
supplying oxygen into the oxide semiconductor layer after performing the first heat treatment;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
performing a plasma treatment after forming the source electrode and the drain electrode;
forming an insulating film over the oxide semiconductor layer, the source electrode, and the drain electrode; and
performing a second heat treatment after forming the insulating film.
19. The method according to claim 18 , wherein the first heat treatment is performed so as to remove moisture in the oxide semiconductor layer.
20. The method according to claim 18 , wherein the first heat treatment is performed for conducting a dehydration treatment and a dehydrogenation treatment of the oxide semiconductor layer.
21. The method according to claim 18 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed by cooling treatment in an oxygen atmosphere.
22. The method according to claim 18 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed under an air atmosphere.
23. The method according to claim 18 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed under an oxygen atmosphere or oxygen nitrogen atmosphere.
24. The method according to claim 18 , wherein the step of supplying oxygen into the oxide semiconductor layer is performed so as to fill an oxygen deficiency in the oxide semiconductor layer.
25. The method according to claim 18 , wherein the gate insulating film has a stacked structure using at least one of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, an aluminum nitride oxide layer, and a hafnium oxide layer.
26. The method according to claim 18 , wherein an N 2 O gas is used for performing the plasma treatment.
27. The method according to claim 1 , wherein a carrier concentration of the oxide semiconductor layer after the step of supplying oxygen into the oxide semiconductor layer is less than 1×10 14 /cm 3 .
28. The method according to claim 9 , wherein a carrier concentration of the oxide semiconductor layer after the step of supplying oxygen into the oxide semiconductor layer is less than 1×10 14 /cm 3 .
29. The method according to claim 18 , wherein a carrier concentration of the oxide semiconductor layer after the step of supplying oxygen into the oxide semiconductor layer is less than 1×10 14 /cm 3 .
30. The method according to claim 1 , wherein an off-state current of the semiconductor device per channel width of 1 μm is 1 aA or less.
31. The method according to claim 9 , wherein an off-state current of the semiconductor device per channel width of 1 μm is 1 aA or less.
32. The method according to claim 18 , wherein an off-state current of the semiconductor device per channel width of 1 μm is 1 aA or less.