Method of fabricating a wafer level semiconductor package having a pre-formed dielectric layer
There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric layer, the window exposing the post-Fab RDL. At least one of the first and second dielectric layers is a pre-formed dielectric layer, which may be affixed over the surface of the wafer using a lamination process. In one implementation, the window is formed using a direct laser ablation process.
1. A method for producing a wafer level semiconductor package, said method comprising:
forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, said first dielectric layer being a pre-formed dielectric layer between said wafer and said second dielectric layer;
forming a window for receiving an electrical contact body in said second dielectric layer, said window exposing said post-Fab RDL.
2. The method of claim 1 , wherein said pre-formed dielectric layer comprises a build-up material.
3. The method of claim 1 , wherein said pre-formed dielectric layer comprises an Ajinomoto™ Build-up Film (ABF).
4. The method of claim 1 , wherein said pre-formed dielectric layer is affixed using a lamination process.
5. The method of claim 1 , wherein said window is formed using a direct laser ablation process.
6. The method of claim 1 , further comprising forming an under-bump metallization (UBM) in said window prior to receiving said electrical contact body.
7. The method of claim 1 , further comprising receiving said electrical contact body in said window so as to electrically couple said electrical contact body to said post-Fab RDL.
8. The method of claim 1 , wherein said electrical contact body is a solder ball.
9. A method for producing a wafer level semiconductor package, said method comprising:
forming a post-fabrication redistribution layer (post-Fab RDL) between a first pre-formed dielectric layer and a second pre-formed dielectric layer affixed over a surface of wafer;
forming a window for receiving an electrical contact body in said second pre-formed dielectric layer, said window exposing said post-Fab RDL.
10. The method of claim 9 , wherein at least one of said first pre-formed dielectric layer and said second pre-formed dielectric layer comprises an Ajinomoto™ Build-up Film (ABF).
11. The method of claim 9 , wherein said first pre-formed dielectric layer and said second pre-formed dielectric layer are affixed using a lamination process.
12. The method of claim 9 , wherein said window is formed using a direct laser ablation process.
13. The method of claim 9 , further comprising forming an under-bump metallization (UBM) in said window prior to receiving said electrical contact body.
14. The method of claim 9 , wherein said electrical contact body is a solder ball.
15. A method for producing a wafer level semiconductor package, said method comprising:
forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, said first dielectric layer being a pre-formed dielectric layer between said wafer and said second dielectric layer;
forming an under-bump metallization (UBM);
forming a window for receiving an electrical contact body in said second dielectric layer, said window exposing said post-Fab RDL;
electrically coupling said electrical contact body to said post-Fab RDL.
16. The method of claim 15 , wherein said pre-formed dielectric layer comprises a build-up material.
17. The method of claim 15 , wherein said pre-formed dielectric layer comprises an Ajinomoto™ Build-up Film (ABF).
18. The method of claim 15 , wherein said pre-formed dielectric layer is affixed using a lamination process.
19. The method of claim 15 , wherein said window is formed using a direct laser ablation process.
20. The method of claim 15 , wherein said electrical contact body is a solder ball.