Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.
1. A backward diode, comprising:
a cathode layer adjacent to a first side of a p-type δ-doping plane or a p-type layer having a non-uniform doping profile;
a spacer layer having a first side adjacent to a second side of the p-type δ-doping plane or of said p-type layer having a non-uniform doping profile;
a tunnel barrier adjacent to a second side of the spacer layer;
a p-doped anode layer; and
an undoped layer in between the tunnel barrier and the anode layer.
2. A backward diode as defined in claim 1 , wherein the tunnel barrier comprises a thickness between 0.3 and 3 nm.
3. A backward diode as defined in claim 2 , wherein the tunnel barrier is undoped.
4. A backward diode as defined in claim 1 , wherein the δ-doping plane or the p-type layer comprises a Beryllium dopant.
5. A backward diode as defined in claim 4 , wherein the Beryllium dopant concentration is at least 5×10 +11 cm −2 .
6. A backward diode as defined in claim 1 , wherein the non-uniform doping profile is a side of the p-type layer closest the cathode layer.