Method of manufacturing nanoimprint stamp
Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
1. A method of manufacturing a nanoimprint stamp, the method comprising:
forming a pattern on a surface of a master substrate;
depositing an etch barrier layer on a surface of a stamp substrate;
coating a photoresist on one of the surface of the master substrate and the surface of the stamp substrate;
pressing the master substrate against the stamp substrate to compress the photoresist;
forming a photoresist pattern on the stamp substrate by hardening the photoresist;
forming a hard mask on the stamp substrate by etching the etch barrier layer using the photoresist pattern; and
etching the stamp substrate using the hard mask as an etch mask,
wherein the etch barrier layer includes one of a first metal including at least one of Cr, Ti, Ta, Pt, Au, and Mo and a metal oxide or a metal nitride that is formed by combining oxygen or nitrogen with the first metal, and the etch barrier layer is formed to have a thickness in a range from about 1 nm to about 20 nm.
2. The method of claim 1 , wherein the master substrate is a silicon substrate.
3. The method of claim 1 , wherein the stamp substrate includes at least one of one of quartz, glass, and polymer.
4. The method of claim 1 , wherein the photoresist is an ultraviolet ray hardening photoresist, and hardening the photoresist includes irradiating ultraviolet rays onto the stamp substrate.
5. A method of manufacturing a nanoimprint stamp, the method comprising:
forming a pattern on a surface of a master substrate;
depositing an etch barrier layer on a surface of a stamp substrate;
coating a photoresist on one of the surface of the master substrate and the surface of the stamp substrate;
pressing the master substrate against the stamp substrate to compress the photoresist;
forming a photoresist pattern on the stamp substrate by hardening the photoresist;
forming a hard mask on the stamp substrate by etching the etch barrier layer using the photoresist pattern; and
etching the stamp substrate using the hard mask as an etch mask,
wherein the etch barrier layer includes one of SiO2, ITO, and Si3N4.
6. The method of claim 5 , wherein the master substrate is a silicon substrate.
7. The method of claim 5 , wherein the stamp substrate includes at least one of one of quartz, glass, and polymer.
8. The method of claim 5 , wherein the photoresist is an ultraviolet ray hardening photoresist, and hardening the photoresist includes irradiating ultraviolet rays onto the stamp substrate.