Mitigation of silicide formation on wafer bevel

1. A method for preventing formation of metal silicide material on a wafer bevel, wherein the wafer bevel surrounds a central region, the method comprising:

placing the wafer in bevel plasma processing chamber;

depositing a protective layer on the wafer bevel;

removing the wafer from the bevel plasma processing chamber;

depositing a metal layer over at least part of the central region of the wafer, wherein part of the metal layer is deposited over the protective layer; and

forming semiconductor devices while preventing metal silicide formation on the wafer bevel.

2. The method, as recited in claim 1 , further comprising placing a central dielectric cover forming part of the bevel plasma processing chamber a distance of no more than 0.75 mm from an upper surface of the wafer.

3. The method, as recited in claim 2 , wherein the protective layer has a thickness of at least 10 nm.

4. The method, as recited in claim 3 , wherein the depositing the protective layer on the wafer bevel is performed at a temperature of less than 120° C.

5. The method, as recited in claim 4 , wherein the depositing the metal layer over at least part of the central region of the wafer deposits a nickel layer.

6. The method, as recited in claim 2 , wherein the depositing the protective layer on the wafer bevel comprises:

providing a deposition gas comprising a silane gas and an oxygen gas;

forming the deposition gas into a plasma, wherein the plasma is limited to only the wafer bevel area;

depositing silicon dioxide only on the wafer bevel, wherein the silane gas provides silicon for the deposited silicon dioxide.

7. The method, as recited in claim 6 , further comprising hardening the deposited silicon dioxide.

8. The method, as recited in claim 7 , wherein the hardening comprises heat or UV treating the deposited silicon dioxide.

9. The method, as recited in claim 7 , further comprising removing the metal layer on the protective layer and the protective layer.

10. The method, as recited in claim 6 , wherein the depositing the protective layer only deposits the protective layer on the surface of the wafer bevel and not on the central region of the wafer.

11. The method, as recited in claim 2 , wherein the depositing the protective layer on the wafer bevel comprises:

providing a deposition gas comprising a polymer forming gas;

forming the deposition gas into a plasma, wherein the plasma is limited to only the wafer bevel area;

depositing polymer only on the wafer bevel.

12. The method, as recited in claim 1 , wherein the depositing the protective layer only deposits the protective layer on the surface of the wafer bevel and not on the central region of the wafer.

13. The method, as recited in claim 1 , further comprising removing the metal layer on the protective layer and the protective layer.

14. The method, as recited in claim 1 , wherein the depositing the protective layer on the wafer bevel comprises:

providing a deposition gas comprising a silane gas and an oxygen gas;

forming the deposition gas into a plasma, wherein the plasma is limited to only the wafer bevel area;

depositing silicon dioxide only on the wafer bevel, wherein the silane gas provides silicon for the deposited silicon dioxide.

15. The method, as recited in claim 1 , wherein outer diameters of insulator rings control an inner boundary of the deposited protective layer.

16. A method for preventing formation of silicide material on a wafer bevel, wherein the wafer bevel surrounds a central region, the method comprising:

placing the wafer in a bevel plasma processing chamber;

depositing a protective silicon dioxide layer on the wafer bevel comprising;

providing a deposition gas comprising a silane gas and an oxygen gas;

forming the deposition gas into a plasma, wherein the plasma is limited to only the wafer bevel area; and

depositing silicon dioxide only on the wafer bevel, wherein the silane gas provides silicon for the deposited silicon dioxide;

removing the wafer from the bevel plasma processing chamber;

depositing a metal layer over at least part of the central region of the wafer, wherein part of the metal layer is deposited over the protective silicon dioxide layer; and

forming semiconductor devices while preventing metal silicide formation on the wafer bevel.

17. The method, as recited in claim 16 , further comprising removing the metal layer on the protective layer and the protective layer.

18. The method, as recited in claim 17 , further comprising hardening the deposited silicon dioxide.

19. The method, as recited in claim 18 , wherein the hardening comprises heat or UV treating the deposited silicon dioxide.

20. The method, as recited in claim 16 , wherein outer diameters of insulator rings control an inner boundary of the deposited protective silicon dioxide layer.