Light emitting diode and fabricating method thereof
A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm −2 , wherein 9.87×10 7 ≦h 2 d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.
1. A light emitting diode (LED), comprising:
a gallium nitride (GaN) substrate comprising a first surface and a second surface respectively disposed on two sides of the GaN substrate, the second surface has a plurality of protuberances, a height of the protuberances is h μm, and a distribution density of the protuberances on the second surface is d cm −2 , wherein h 2 d≧9.87×10 7 , and h≦1.8;
a first type semiconductor layer disposed on the first surface of the GaN substrate;
a light emitting layer disposed on a partial region of the first semiconductor layer, and a wavelength of a light emitted by the light emitting layer is from 375 nm to 415 nm;
a second type semiconductor layer disposed on the light emitting layer; and
a first electrode and a second electrode, wherein the first electrode is disposed on a partial region of the first type semiconductor layer, and the second electrode is disposed on a partial region of the second type semiconductor layer.
2. The LED as claimed in claim 1 , wherein a thickness of the GaN substrate is between 70 μm to 120 μm.
3. The LED as claimed in claim 1 , wherein 0.25≦h≦1.8.
4. The LED as claimed in claim 1 , wherein 8×10 8 ≦d≦9×10 9 .
5. The LED as claimed in claim 1 , wherein the second surface is a nitride surface of the GaN substrate.
6. An LED, comprising:
a GaN substrate comprising a first surface and a second surface, wherein the first surface and the second surface are disposed on two sides of the GaN substrate, and the second surface has a plurality of protuberances, a height of the protuberances is h μm, and a distribution density of the protuberances on the second surface is d cm −2 , wherein h 2 d≧9.87×10 7 , and d≧8×10 8 ;
a first type semiconductor layer disposed on the first surface of the GaN substrate;
a light emitting layer disposed on a partial portion of the first type semiconductor layer, and a wavelength of a light emitted by the light emitting layer is from 375 nm to 415 nm;
a second type semiconductor layer disposed on the light emitting layer; and
a first electrode and a second electrode, wherein the first electrode is disposed on a partial region of the first type semiconductor layer, and the second electrode is disposed on a partial region of the second type semiconductor layer.
7. The LED as claimed in claim 6 , wherein a thickness of the GaN substrate is between 70 μm to 120 μm.
8. The LED as claimed in claim 6 , wherein 0.25≦h≦1.8.
9. The LED as claimed in claim 6 , wherein 8×10 8 ≦d≦9×10 9 .
10. The LED as claimed in claim 6 , wherein the second surface is a nitride surface of the GaN substrate.
11. An LED, comprising:
a GaN substrate comprising a first surface and a second surface, wherein the first surface and the second surface are disposed on two sides of the GaN substrate, and the second surface has a plurality of protuberances, a height of the protuberances is h μm, and a distribution density of the protuberances on the second surface is d cm −2 , wherein 3≦h≦6, and 1.5×10 6 ≦d≦7.5×10 6 ;
a first type semiconductor layer disposed on the first surface of the GaN substrate;
a light emitting layer disposed on a partial portion of the first type semiconductor layer, and a wavelength of a light emitted by the light emitting layer is from 375 nm to 415 nm;
a second type semiconductor layer disposed on the light emitting layer; and
a first electrode and a second electrode, wherein the first electrode is disposed on a partial region of the first type semiconductor layer, and the second electrode is disposed on a partial region of the second type semiconductor layer.
12. The LED as claimed in claim 11 , wherein a thickness of the GaN substrate is between 70 μm to 120 μm.
13. The LED as claimed in claim 11 , wherein the second surface is a nitride surface of the GaN substrate.