Apparatus having thermal-enhanced and cost-effective 3D IC integration structure with through silicon via interposers
An apparatus having a three-dimensional integrated circuit structure is described herein. The apparatus include an interposer for carrying a plurality of high and low-power chips. The high-power chips are attached and connected to one side of the interposer, while the low-power chips are attached and connected to the other side of the interposer. In generally, the high-power chips produce more heat than does the low-power chip during their operations. The interposer further include through silicon vias and redistribution layers for connecting the chips on both surfaces. In addition, the interposer assembly is attached and connected to a substrate layer, which is in turn attached and connected to a printed circuit board. In order to provide improve thermal management, the interposer surface carrying the high-power chips are oriented away from the circuit board. A heat spreader is attached to the back sides of the high-power chips for dissipating the heat.
1. An integrated circuit structure, comprising:
one or more high power integrated circuit (IC) chips in bare chip form;
one or more low power IC chips in bare chip form, wherein each high power IC chip generates more heat than each low power IC chip;
an interposer having a plurality of through silicon vias and having one or more redistribution layers, wherein a first surface of the interposer is connected to the one or more high power IC chips and a second surface of the interposer is connected to the one or more low power IC chips, the interposer providing wafer-level electronic interconnects between the one or more high power IC chips and the one or more low power IC chips;
a heat spreader attached to the one or more high power IC chips for dissipating heat from the one or more high power IC chips; and
a substrate layer attached to the second surface of the interposer for supporting the interposer and providing electronic interconnects between the interposer and a printed circuit board.
2. The structure of claim 1 , further comprising:
a heat sink attached to the heat spreader for providing additional cooling to the one or more high-power IC chips; and
a stiffener inserted between the heat sink and the substrate for supporting the heat sink.
3. The structure of claim 1 , wherein each of the one or more high power IC chips is attached and connected to the first surface of the interposer through a front surface of the high power IC chip according to a flip-chip method, and
wherein the heat spreader is attach to a back surface of the high power IC chip through a thermal interface layer.
4. The structure of claim 1 , wherein the substrate layer has an internal opening aligned with the one or more low power IC chips.
5. The structure of claim 2 , wherein each of the heat sink and the substrate layer has a horizontal dimension larger than those of the interposer and the heat spreader so that the heat sink, the substrate layer, and the stiffener forms an enclosed space enclosing the interposer, the one or more high power IC chips, the one or more low power IC chips, and the heat spreader.
6. The structure of claim 1 , wherein at least one of the one or more low power IC chips is attached and connected to the second surface of the interposer through a front surface of the at least one low power IC chip according to a flip-chip method.
7. The structure of claim 1 , wherein at least one of the one or more low power IC chips is attached to the second surface of the interposer through a die attach layer and connected to the second surface of the interposer through wire bonds.
8. The structure of claim 1 , wherein the substrate layer is attached to the second surface of the interposer through a plurality of solder bumps.
9. The structure of claim 1 , wherein the substrate layer is attached to the PCB board through a plurality of solder balls.
10. The structure of claim 1 , wherein the substrate layer has an internal opening aligned with the one or more low power IC chips and the substrate layer has a vertical dimension larger than those of the one or more low power IC chips so that the one or more low power IC chips are lifted away from the printed circuit board.
11. The structure of claim 1 , wherein the one or more high power IC chips include at least one of a graphic processing unit, an audio processing unit, a high power memory chip, a radio frequency chip, an ASIC logic chip, a micro-controller unit, and a digital signal processing chip.
12. The structure of claim 1 , wherein the one or more low power IC chips include a memory module.
13. A method for fabricating an integrated circuit structure, comprising:
providing one or more high power integrated circuit IC chips in bare chip form;
providing one or more low power IC chips in bare chip form, wherein each high power IC chip generates more heat than each low power IC chip;
forming an interposer having a plurality of through silicon vias and having one or more redistribution layers, wherein a first surface of the interposer is connected to the one or more high power IC chips and a second surface of the interposer is connected to the one or more low power IC chips, the interposer providing wafer-level electronic interconnects between the one or more high power IC chips and the one or more low power IC chips;
forming a heat spreader attached to the one or more high power IC chips for dissipating heat from the one or more high power IC chips; and
forming a substrate layer attached to the second surface of the interposer for supporting the interposer and providing electronic interconnects between the interposer and a printed circuit board.