Solid-state imaging device, manufacturing method of the same and electronic apparatus
Disclosed herein is a solid-state imaging device including: an opto-electrical conversion section provided inside a semiconductor substrate to receive incident light coming from one surface of the semiconductor substrate; a wiring layer provided on the other surface of the semiconductor substrate; and a light absorption layer provided between the other surface of the semiconductor substrate and the wiring layer to absorb transmitted light passing through the opto-electrical conversion section as part of the incident light.
1. A solid-state imaging device comprising:
an opto-electrical conversion section provided inside a semiconductor substrate to receive incident light coming from one surface of said semiconductor substrate;
a wiring layer provided on another surface of said semiconductor substrate; and
a light absorption layer provided between said another surface of said semiconductor substrate and said wiring layer to absorb transmitted light passing through said opto-electrical conversion section as part of said incident light,
wherein said semiconductor substrate is created from single crystal silicon, and
wherein said light absorption layer is created from at least one material selected from the group consisting of amorphous silicon, microcrystal silicon, and amorphous silicon doped with germanium.
2. The solid-state imaging device according to claim 1 wherein a light-reflection preventing layer is provided between said another surface of said semiconductor substrate and said wiring layer.
3. The solid-state imaging device according to claim 1 wherein said light absorption layer is created from a material having a light absorption coefficient greater than that of said semiconductor substrate.
4. The solid-state imaging device according to claim 1 wherein:
said light absorption layer is created from amorphous silicon.
5. The solid-state imaging device according to claim 1 wherein:
said light absorption layer is created from amorphous silicon doped with germanium.
6. The solid-state imaging device according to claim 1 wherein:
said light absorption layer is created from microcrystal silicon.
7. The solid-state imaging device according to claim 1 wherein a voltage is applied to said light absorption layer in order to prevent a dark current from being generated on said another surface of said semiconductor substrate.
8. The solid-state imaging device according to claim 1 , said solid-state imaging device further comprising a pixel transistor circuit provided on said another surface of said semiconductor substrate to output signal electric charge, which is generated by said opto-electrical conversion section, as an electrical signal, wherein said wiring layer is provided on said another surface of said semiconductor substrate to sandwich said pixel transistor circuit between said wiring layer and said another surface of said semiconductor substrate.
9. A method for manufacturing a solid-state imaging device comprising:
providing an opto-electrical conversion section inside a semiconductor substrate to serve as a section for receiving incident light coming from one surface of said semiconductor substrate;
providing a light absorption layer on said another surface of said semiconductor substrate to serve as a layer for absorbing transmitted light passing through said opto-electrical conversion section as part of said incident light; and
a wiring layer so as to cover said another surface pertaining to said semiconductor substrate to serve as a surface on which said light absorption layer has been provided,
wherein said semiconductor substrate created from single crystal silicon, and
wherein said light absorption layer is created from at least one material selected from the group consisting of amorphous silicon, microcrystal silicon, and amorphous silicon doped with germanium.
10. An electronic apparatus comprising:
an opto-electrical conversion section provided inside a semiconductor substrate to receive incident light coming from one surface of said semiconductor substrate;
a wiring layer provided on the other surface of said semiconductor substrate; and
a light absorption layer provided between said another surface of said semiconductor substrate and said wiring layer to absorb transmitted light passing through said opto-electrical conversion section as part of said incident light,
wherein said semiconductor substrate is created from single crystal silicon, and
wherein said light absorption layer is created from at least one material selected from the group consisting of amorphous silicon, microcrystal silicon, and amorphous silicon doped with germanium.