Semiconductor device and manufacturing method thereof
View Patent ↗It is an object to provide a semiconductor device having excellent electric characteristics or high reliability, or a manufacturing method thereof. A semiconductor device including a gate electrode, an oxide semiconductor layer overlapping with the gate electrode, a source electrode and a drain electrode in contact with the oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer is provided. The oxide semiconductor layer is formed by a facing target sputtering method. The carrier concentration of the oxide semiconductor is less than 1×10 12 /cm 3 .
1. A manufacturing method of a semiconductor device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating layer over the gate electrode; and
forming an oxide semiconductor layer over the gate insulating layer,
wherein the oxide semiconductor layer is formed by a sputtering method in which a pair of targets provided to face each other is used, and
wherein a concentration of hydrogen in the oxide semiconductor layer is reduced by a first heat treatment after the oxide semiconductor layer is formed, and oxygen is supplied to the oxide semiconductor layer by a second heat treatment after the first heat treatment.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein the gate insulating layer is formed by a sputtering method in which a pair of targets provided to face each other is used.
3. The manufacturing method of the semiconductor device according to claim 1 , wherein an insulating layer in contact with the oxide semiconductor layer is formed by a sputtering method in which a pair of targets provided to face each other is used.
4. The manufacturing method of the semiconductor device according to claim 1 , wherein a carrier concentration of the oxide semiconductor layer is less than 1×10 12 /cm 3 .
5. A semiconductor device manufactured by using the method according to claim 1 .
6. A semiconductor device according to claim 5 , wherein the semiconductor device is one selected from the group consisting of a laptop computer, a portable information terminal, an e-book reader, a mobile phone and a digital camera.
7. The manufacturing method of the semiconductor device according to claim 1 , further comprising a step of forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.
8. A manufacturing method of a semiconductor device, comprising the steps of:
forming an oxide semiconductor layer over a substrate;
forming a gate insulating layer in contact with at least a channel formation region of the oxide semiconductor layer; and
forming a gate electrode over the gate insulating layer,
wherein the oxide semiconductor layer is formed by a sputtering method in which a pair of targets provided to face each other is used, and
wherein a concentration of hydrogen in the oxide semiconductor layer is reduced by a first heat treatment after the oxide semiconductor layer is formed, and oxygen is supplied to the oxide semiconductor layer by a second heat treatment after the first heat treatment.
9. The manufacturing method of the semiconductor device according to claim 8 , wherein the gate insulating layer is formed by a sputtering method in which a pair of targets provided to face each other is used.
10. The manufacturing method of the semiconductor device according to claim 8 , wherein an insulating layer in contact with the oxide semiconductor layer is formed by a sputtering method in which a pair of targets provided to face each other is used.
11. The manufacturing method of the semiconductor device according to claim 8 , wherein a carrier concentration of the oxide semiconductor layer is less than 1×10 12 /cm 3 .
12. A semiconductor device manufactured by using the method according to claim 8 .
13. A semiconductor device according to claim 12 , wherein the semiconductor device is one selected from the group consisting of a laptop computer, a portable information terminal, an e-book reader, a mobile phone and a digital camera.
14. The manufacturing method of the semiconductor device according to claim 8 , further comprising a step of forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer.