Package process and package structure
A package process is provided. An adhesive layer is disposed on a carrier board and then plural first semiconductor devices are disposed on the adhesive layer. A first molding compound formed on the carrier board covers the sidewalls of the first semiconductor devices and fills the gaps between the first semiconductor devices so as to form a chip array board constructed by the first semiconductor devices and the first molding compound. Next, plural second semiconductor devices are flip-chip bonded to the first semiconductor devices respectively. Then, a second molding compound formed on the chip array board at least covers the sidewalls of the second semiconductor devices and fills the gaps between the second semiconductor devices. Subsequently, the chip array board is separated from the adhesive layer. Then, the first and the second molding compound are cut along the gaps between the second semiconductor devices.
1. A package structure, comprising:
a circuit substrate;
a first semiconductor device formed on the circuit substrate, wherein the first semiconductor device is a functional device and has a plurality of through-silicon via structures;
a first molding compound enclosing a first sidewall of the first semiconductor device;
a second semiconductor device formed on the first semiconductor device and a first portion of the first molding compound, wherein a dimension of the second semiconductor device is larger than a dimension of the first semiconductor device;
a second molding compound at least covering a second sidewall of the second semiconductor device and the rest portion of the top surface of the first molding compound, wherein the first molding compound and the second molding compound are individually formed;
a plurality of conductive bumps directly attached a bottom surface of the first semiconductor device and a top surface of the circuit substrate; and
an encapsulant formed on the circuit substrate to cover at least a third sidewall of the first molding compound and a fourth sidewall of the second molding compound.
2. The package structure of claim 1 , wherein a first side surface of the first molding compound is aligned with a second side surface of the second molding compound.
3. The package process of claim 1 , wherein a first top surface of the first molding compound facing the second semiconductor device is aligned with a second top surface of the first semiconductor device facing the second semiconductor device.
4. The package structure of claim 1 , wherein the second semiconductor device has a plurality of conductive bumps configured between the second semiconductor device and the first semiconductor device and the package structure further comprises:
an underfill configured between the second semiconductor device and the first semiconductor device and between the second semiconductor device and the first molding compound to enclose the conductive bumps of the second semiconductor device.
5. The package structure of claim 1 , wherein a thickness of the first semiconductor device is substantially smaller than or equal to 4 mil.
6. The package structure of claim 1 , wherein the second molding compound further covers a top surface of the second semiconductor device and the top surface is away from the first semiconductor device.
7. The package structure of claim 1 , wherein the second molding compound exposes a top surface of the second semiconductor device and the top surface is away from the first semiconductor device.
8. The chip package structure of claim 1 , further comprising:
an underfill configured between the first semiconductor device and the circuit substrate to enclose the conductive bumps.
9. The package structure of claim 1 , wherein the second molding compound and the third molding compound expose a top surface of the second semiconductor device and the top surface is away from the first semiconductor device.
10. The package structure of claim 1 , wherein the third molding compound covers a top surface of the second semiconductor device and the top surface is away from the first semiconductor device.