Top gate thin film transistor and display apparatus including the same
Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.
1. A top gate thin film transistor, comprising on a substrate:
a source electrode layer;
a drain electrode layer;
an oxide semiconductor layer;
a gate insulating layer;
a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and
a protective layer containing hydrogen, wherein:
the gate insulating layer is formed on a channel region of the oxide semiconductor layer;
the gate electrode layer is formed on the gate insulating layer;
the protective layer is formed on the gate electrode layer and a region except the channel region of the oxide semiconductor layer; and
a width of the gate insulating layer is smaller than a width of the oxide semiconductor layer in a channel length direction.
2. The top gate thin film transistor according to claim 1 , wherein the source electrode layer, the drain electrode layer, and the channel region are formed in the same oxide semiconductor layer.
3. The top gate thin film transistor according to claim 1 , wherein the oxide semiconductor layer is formed of an amorphous oxide semiconductor.
4. A display apparatus, comprising:
the top gate thin film transistor according to claim 1 ; and
a display device,
wherein the display device is electrically connected to one of a source electrode layer and a drain electrode layer of the top gate thin film transistor.
5. The top gate thin film transistor according to claim 2 , wherein the source electrode layer, the drain electrode layer, and the channel region are formed in a self alignment manner.