Display device
The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.
1. A display device comprising:
a display region in which pixel electrodes and TFTs for pixel are formed in a matrix array; and
a drive circuit which is formed in a periphery of the display region and includes a TFT for drive circuit, wherein
the TFT for pixel is a bottom-gate-type TFT having a channel portion which is formed of an a-Si layer,
the TFT for drive circuit is a bottom-gate-type TFT, the TFT for drive circuit is constituted by forming a channel portion using a poly-Si layer, by placing an a-Si layer on the poly-Si layer, by forming an n+Si layer on the a-Si layer, and by forming an SD electrode on the n+Si layer,
a gate insulation film is formed on a gate electrode of the TFT for drive circuit,
the poly-Si layer is formed on the gate insulation film and has a main surface and a side surface,
the main surface faces the gate electrode of the TFT for drive circuit,
the side surface intersects both the main surface and the gate insulation film and extends to contact the gate insulation film at an intersection point of the side surface and the gate insulation film,
an entirety of the side surface is in contact with the a-Si layer of the TFT for drive circuit,
the a-Si layer of the TFT for drive circuit covers the poly-Si layer including covering the side surface, and
the poly-Si layer is not brought into contact with the SD electrode.
2. A display device according to claim 1 , wherein the poly-Si layer is formed by applying laser annealing to the a-Si layer.
3. A display device according to claim 1 , wherein a gate electrode of the bottom-gate-type TFT for the pixel and the gate electrode of the bottom-gate-type TFT for the drive circuit are made of Mo or Mo alloy.
4. A display device according to claim 1 , wherein the SD electrode is constituted of a barrier metal layer, an Al layer and a cap metal layer, and the barrier metal layer and the cap metal layer are made of Mo or Mo alloy.
5. A display device comprising:
a display region in which pixel electrodes and TFTs for pixel are formed in a matrix array; and
a drive circuit which is formed in a periphery of the display region and includes a TFT for drive circuit, wherein
the TFT for pixel is a bottom-gate-type TFT having a channel portion which is formed of an a-Si layer,
the TFT for drive circuit is a bottom-gate-type TFT, the TFT for drive circuit is constituted by forming a channel portion using a poly-Si layer, by placing an a-Si layer on the poly-Si layer, by forming an n+Si layer on an upper portion and a side portion of the a-Si layer, and by forming an SD electrode on the n+Si layer,
a gate insulation film is formed on a gate electrode of the TFT for drive circuit,
the poly-Si layer is formed on the gate insulation film and has a main surface and a side surface,
the main surface faces the gate electrode of the TFT for drive circuit,
the side surface intersects both the main surface and the gate insulation film and extends to contact the gate insulation film at an intersection point of the side surface and the gate insulation film,
an entirety of the side surface is in contact with the a-Si layer of the TFT for drive circuit,
the a-Si layer of the TFT for drive circuit covers the poly-Si layer including covering the side surface, and
the poly-Si layer is not brought into contact with the n+Si layer.
6. A display device according to claim 5 , wherein the poly-Si layer is formed by applying laser annealing to the a-Si layer.
7. A display device according to claim 5 , wherein a gate electrode of the bottom-gate-type TFT for the pixel and the gate electrode of the bottom-gate-type TFT for the drive circuit are made of Mo or Mo alloy.
8. A display device according to claim 5 , wherein the SD electrode is constituted of a barrier metal layer, an Al layer and a cap metal layer, and the barrier metal and the cap metal are made of Mo or Mo alloy.
9. A liquid crystal display device comprising:
a TFT substrate which forms a display region in which pixel electrodes and TFTs for pixel are formed in a matrix array and a drive circuit which includes a TFT for drive circuit in a periphery of the display region thereon;
a color filter substrate which faces the TFT substrate in an opposed manner and forms color filters on portions thereof corresponding to the pixel electrodes; and
liquid crystal which is sandwiched between the TFT substrate and the color filter substrate; wherein
the TFT for pixel is a bottom-gate-type TFT having a channel portion which is formed of an a-Si layer,
the TFT for drive circuit is a bottom-gate-type TFT, the TFT for drive circuit is constituted by forming a channel portion using a poly-Si layer, by placing an a-Si layer on the poly-Si layer, by forming an n+Si layer on the a-Si layer, and by forming an SD electrode on the n+Si layer,
a gate insulation film is formed on a gate electrode of the TFT for drive circuit,
the poly-Si layer is formed on the gate insulation film and has a main surface and a side surface,
the main surface faces the gate electrode of the TFT for drive circuit,
the side surface intersects both the main surface and the gate insulation film and extends to contact the gate insulation film at an intersection point of the side surface and the gate insulation film,
an entirety of the side surface is in contact with the a-Si layer of the TFT for drive circuit,
the a-Si layer of the TFT for drive circuit covers the poly-Si layer including covering the side surface, and
the poly-Si layer is not brought into contact with the SD electrode.
10. A liquid crystal display device according to claim 9 , wherein a side portion of the a-Si layer is also covered with the n+Si layer.
11. An organic EL display device including a TFT substrate which forms a display region in which organic EL layers and TFTs for pixel are formed in a matrix array and a drive circuit which includes a TFT for drive circuit in a periphery of the display region thereon, wherein
the TFT for pixel is a bottom-gate-type TFT having a channel portion which is formed of an a-Si layer,
the TFT for drive circuit is a bottom-gate-type TFT, the TFT for drive circuit is constituted by forming a channel portion using a poly-Si layer, by placing an a-Si layer on the poly-Si layer, by forming an n+Si layer on the a-Si layer, and by forming an SD electrode on the n+Si layer,
a gate insulation film is formed on a gate electrode of the TFT for drive circuit,
the poly-Si layer is formed on the gate insulation film and has a main surface and a side surface,
the main surface faces the gate electrode of the TFT for drive circuit,
the side surface intersects both the main surface and the gate insulation film and extends to contact the gate insulation film at an intersection point of the side surface and the gate insulation film,
an entirety of the side surface is in contact with the a-Si layer of the TFT for drive circuit,
the a-Si layer of the TFT for drive circuit covers the poly-Si layer including covering the side surface, and
the poly-Si layer is not brought into contact with the SD electrode.
12. An organic EL display device according to claim 11 , wherein a side portion of the a-Si layer is also covered with the n+Si layer.
13. A display device comprising:
a display region in which pixel electrodes and TFTs for pixel are formed in a matrix array; and
a drive circuit which is formed in a periphery of the display region and includes a TFT for drive circuit, wherein
the TFT for pixel is a bottom-gate-type TFT having a channel portion which is formed of an a-Si layer,
the TFT for drive circuit is a bottom-gate-type TFT, the TFT for drive circuit is constituted by forming a channel portion using a strip-shaped crystal silicon layer, by placing an a-Si layer on the strip-shaped crystal silicon layer, by forming an n+Si layer on the a-Si layer, and by forming an SD electrode on the n+Si layer,
a gate insulation film is formed on a gate electrode of the TFT for drive circuit,
the strip-shaped crystal silicon layer is formed on the gate insulation film and has a main surface and a side surface,
the main surface faces the gate electrode of the TFT for drive circuit,
the side surface intersects both the main surface and the gate insulation film and extends to contact the gate insulation film at an intersection point of the side surface and the gate insulation film,
an entirety of the side surface is in contact with the a-Si layer of the TFT for drive circuit,
the a-Si layer of the TFT for drive circuit covers the strip-shaped crystal silicon layer including covering the side surface, and
the strip-shaped crystal silicon layer is not brought into contact with the SD electrode.