IP Library Granted Patent US 8,624,807
Granted Patent B2
US 8,624,807 · App. 12/945,310 · Granted Jan 7, 2014

Light emitting device and driving method thereof

Inventors: Hiroyuki Miyake (Kanagawa, JP); Ryota Fukumoto (Kanagawa, JP); Tomoyuki Iwabuchi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,624,807
App. No.
12/945,310
Granted
Jan 7, 2014
Kind
B2
Abstract

According to a driving method of applying a reverse bias voltage, capacitance occurs due to a stacked structure of a conductor, an insulator and a conductor, or due to a structure of a TFT. This capacitance prevents normal operation. The invention provides a pixel configuration including at least a driving transistor for driving a light emitting element and a switching transistor for controlling the driving transistor, wherein the switching transistor is turned on in the case of applying a forward bias voltage after applying a reverse bias voltage. As a result, it is prevented that the potential changes due to unwanted capacitive coupling.

Claims (50)

1. A driving method of a light emitting device comprising a current supply line, a scan line electrically connected to a first selection circuit where a signal is input and to a second selection circuit, a light emitting element electrically connected to the current supply line, a first transistor driving the light emitting element and a second transistor controlling the first transistor, comprising the steps of:

allowing the light emitting element to emit light by applying a forward bias voltage to the light emitting element during a first period;

erasing data that has been written during the first period in a second period;

applying a reverse bias voltage to the light emitting element during a third period after the second period; and

applying a forward bias voltage to the light emitting element during a fourth period after the third period,

wherein a gate electrode of the first transistor is kept in a non-floating state and the first transistor is kept in an off state at least at a time of starting the fourth period,

wherein the second transistor is electrically connected to the scan line,

wherein the signal has a first potential and a second potential lower than the first potential, and

wherein a first time length in which the first potential is supplied is equal to a second time length in which the second potential is supplied.

2. The driving method of a light emitting device, according to claim 1 , wherein a period during which the reverse bias voltage is applied comprises a period during which each of all scan lines supplies a first potential before the reverse bias voltage is applied.

3. The driving method of a light emitting device, according to claim 1 , wherein the second period is provided before a period during which each of all the scan lines supplies a first potential.

4. The driving method of a light emitting device, according to claim 1 , wherein a period during which each of all the scan lines supplies a second potential is provided after a reverse bias voltage is applied to the light emitting element.

5. The driving method of a light emitting device, according to claim 1 ,

wherein the period of applying a reverse bias voltage is provided in one frame period,

wherein the one frame period comprises m (m is a natural number of 2 or more) subframe periods SF 1 , SF 2 , . . . , SFm, and

wherein the m subframe periods comprise writing periods Ta 1 , Ta 2 , . . . , Tam and display periods Ts 1 , Ts 2 , . . . , Tsm.

6. The driving method of a light emitting device, according to claim 1 , wherein the gate electrode of the first transistor is kept in the non-floating state by turning on the second transistor.

7. A driving method of a light emitting device comprising a current supply line, a scan line electrically connected to a first selection circuit where a signal is input and to a second selection circuit, a light emitting element having a light emitting layer between an anode and a cathode, electrically connected to the current supply line, a first transistor driving the light emitting element and a second transistor controlling the first transistor, comprising the steps of:

allowing the light emitting element to emit light by determining a potential of the cathode is lower than that of the anode during a first period;

erasing data that has been written during the first period in a second period;

determining a potential of the cathode is the same or higher than that of the anode during a third period after the second period; and

decreasing the potential of the cathode to have lower potential than that of the anode during a fourth period after the third period,

wherein a gate electrode of the first transistor is kept in a non-floating state and the first transistor is kept in an off state at least at a time of starting the fourth period,

wherein the second transistor is electrically connected to the scan line,

wherein the signal has a first potential and a second potential lower than the first potential, and

wherein a first time length in which the first potential is supplied is equal to a second time length in which the second potential is supplied.

8. The driving method of a light emitting device, according to claim 7 , wherein a period during which the reverse bias voltage is applied comprises a period during which each of all scan lines supplies a first potential before the reverse bias voltage is applied.

9. The driving method of a light emitting device, according to claim 7 , wherein the second period is provided before a period during which each of all the scan lines supplies a first potential.

10. The driving method of a light emitting device, according to claim 7 , wherein a period during which each of all the scan lines supplies a second potential is provided after a reverse bias voltage is applied to the light emitting element.

11. The driving method of a light emitting device, according to claim 7 ,

wherein the period of applying a reverse bias voltage is provided in one frame period,

wherein the one frame period comprises m (m is a natural number of 2 or more) subframe periods SF 1 , SF 2 , SFm, and

wherein the m subframe periods comprise writing periods Ta 1 , Ta 2 , . . . , Tam and display periods Ts 1 , Ts 2 , . . . , Tsm.

12. The driving method of a light emitting device, according to claim 7 , wherein the gate electrode of the first transistor is kept in the non-floating state by turning on the second transistor.

13. A driving method of a light emitting device having a first row of pixels connected with a first scan line, which is electrically connected to a first selection circuit where a signal is input and to a second selection circuit, and a second row of pixels connected with a second scan line, each of the pixels comprising a current supply line, a light emitting element electrically connected to the current supply line, first transistors driving the light emitting element and second transistors controlling the first transistors, comprising the steps of:

allowing the light emitting element to emit light by applying a forward bias voltage to the light emitting element during a first period;

erasing data that has been written during the first period in a second period;

applying a reverse bias voltage to the light emitting element during a third period after the second period; and

applying a forward bias voltage to the light emitting element during a fourth period after the third period,

wherein the second transistors in the first row of pixels and the second transistors in the second row of pixels are simultaneously turned on, so that gate electrodes of the first transistors in the first and the second rows of pixels are kept in a non-floating state and the first transistors in the first and the second rows of pixels are kept in an off state at least at a time of starting a supply of a forward bias voltage to the light emitting element after applying a reverse bias to the light emitting element,

wherein one of the second transistors is electrically connected to the first scan line,

wherein the signal has a first potential and a second potential lower than the first potential, and

wherein a first time length in which the first potential is supplied is equal to a second time length in which the second potential is supplied.

14. The driving method of a light emitting device, according to claim 13 , wherein a period during which the reverse bias voltage is applied comprises a period during which each of the first and the second scan lines supplies a first potential before the reverse bias voltage is applied.

15. The driving method of a light emitting device, according to claim 13 , wherein an erasing period is provided before a period during which each of a the first and the second scan lines supplies a first potential.

16. The driving method of a light emitting device, according to claim 13 , wherein a period during which each of the first and the second scan lines supplies a second potential is provided after a reverse bias voltage is applied to the light emitting element.

17. The driving method of a light emitting device, according to claim 13 ,

wherein the period of applying a reverse bias voltage is provided in one frame period,

wherein the one frame period comprises m (m is a natural number of 2 or more) subframe periods SF 1 , SF 2 , . . . SFm, and

wherein the m subframe periods comprise writing periods Ta 1 , Ta 2 , . . . , Tam and display periods Ts 1 , Ts 2 , . . . , Tsm.

Priority Claims (1)
JP 2004-223024 · Jul 30, 2004 · national
Continuity (2)
Division 11190777 · Jul 27, 2005
Related Publication 20110057925A1 · Mar 10, 2011