Semiconductor integrated circuit

1. A semiconductor integrated circuit comprising:

a first P-type MOS transistor and two or more N-type MOS transistors connected together in series between a first and a second power supply;

an input terminal connected to a gate terminal of the first P-type MOS transistor and gate terminals of the two or more N-type MOS transistors;

an output terminal which is a connection node between the first P-type MOS transistor and one of the two or more N-type MOS transistors connected to the first P-type MOS transistor;

one or more capacitors connected to the output terminal;

the two or more N-type MOS transistors comprising a first N-type MOS transistor and a second N-type MOS transistor;

a second P-type MOS transistor having a gate terminal connected to the input terminal;

a source terminal of the second P-type MOS transistor connected to a connection node between the first N-type MOS transistor and the second N-type MOS transistor; and

a drain terminal of the second P-type MOS transistor connected to the output terminal.

2. The semiconductor integrated circuit of claim 1 , wherein the substrate potentials of the first P-type MOS transistor and the two or more N-type MOS transistors are separately controlled.

3. The semiconductor integrated circuit of claim 1 , further comprising:

one or more P-type MOS transistors each having a gate terminal connected to the input terminal, and each connected between a connection node between the corresponding two of the two or more N-type MOS transistors connected together in series and the first power supply.

4. The semiconductor integrated circuit of claim 1 , wherein

the one or more capacitors each include at least one P-type or N-type MOS transistor, and

if at least one of the one or more capacitors includes the P-type MOS transistor and at least another one of the one or more capacitors includes the N-type MOS transistor, the capacitance value of the at least one capacitor including the P-type MOS transistor is smaller than the capacitance value of the at least one capacitor including the N-type MOS transistor.

5. The semiconductor integrated circuit of claim 1 , wherein

the one or more capacitors each include at least one P-type or N-type MOS transistor, and

if at least one of the one or more capacitors includes the P-type MOS transistor and at least another one of the one or more capacitors includes the N-type MOS transistor, the product of the channel length and channel width of the at least one capacitor including the P-type MOS transistor is smaller than the product of the channel length and channel width of the at least one capacitor including the N-type MOS transistor.

6. The semiconductor integrated circuit of claim 1 , wherein the semiconductor integrated circuit is mounted in a semiconductor storage device, a polarity of the two or more N-type transistors connected together in series is the same as a polarity of one or more third MOS transistors connected together in series between a bit line and the first or second power supply in the semiconductor storage device, one of the third transistors being connected to the bit line.

7. The semiconductor integrated circuit of claim 1 , wherein the semiconductor integrated circuit is mounted in a semiconductor storage device, the number of the two or more N-type MOS transistors connected together in series is the same as the number of third transistors connected together in series between a bit line and the first or second power supply in the semiconductor storage device.

8. The semiconductor integrated circuit of claim 1 , wherein the semiconductor integrated circuit is mounted in a semiconductor storage device, an impurity concentration of the two or more N-type MOS transistors connected together in series is the same as an impurity concentration of third transistors connected together in series between a bit line in the semiconductor storage device.

9. The semiconductor integrated circuit of claim 1 , wherein

when the semiconductor integrated circuit is mounted in a semiconductor storage device in which a potential of a memory array is different from a potential of a portion thereof other than the memory array, the first potential applied to the semiconductor integrated circuit is equal to the potential of the memory array.

10. The semiconductor integrated circuit of claim 1 , wherein the semiconductor integrated circuit is used as a delay circuit which generates a timing signal for activating a sense amplifier circuit which amplifies data read from a memory cell in a semiconductor storage device.

11. The semiconductor integrated circuit of claim 1 , wherein

the semiconductor integrated circuit is used as a delay circuit which generates a timing signal for writing data to a memory cell in a semiconductor storage device.

12. The semiconductor integrated circuit of claim 1 , wherein

the one or more P-type MOS transistors other than the P-type MOS transistors included in the one or more capacitors have the same channel width and the same channel length, and

the one or more N-type MOS transistors other than the N-type MOS transistors included in the one or more capacitors have the same channel width and the same channel length.

13. The semiconductor integrated circuit of claim 1 , wherein

the one or more P-type MOS transistors other than the P-type MOS transistors included in the one or more capacitors have gate electrodes arranged in parallel to each other,

a diffusion region shaped by at least the one or more P-type MOS transistors other than the P-type MOS transistors included in the one or more capacitors is in the shape of a rectangle,

the one or more N-type MOS transistors other than the N-type MOS transistors included in the one or more capacitors have gate electrodes arranged in parallel to each other, and

a diffusion region shaped by at least the one or more N-type MOS transistors other than the N-type MOS transistors included in the one or more capacitors is in the shape of a rectangle.

14. The semiconductor integrated circuit of claim 13 , wherein

a P-well and an N-well are provided and separated from each other in a direction perpendicular to the channel direction of the transistors,

the P-type MOS transistors other than those included in the capacitors are provided in the P-well, and the N-type MOS transistors other than those included in the capacitors are provided in the N-well,

the capacitors are provided adjacent to the P-type MOS transistors or the N-type MOS transistors, and

the capacitors are provided in a region having a length in the direction perpendicular to the transistor channel direction which is smaller than or equal to that of a region where the P-type MOS transistors or the N-type MOS transistors are formed.

15. The semiconductor integrated circuit of claim 14 , wherein

the capacitance value of the capacitor is changed by changing a size thereof in the same direction as the transistor channel direction while keeping a length thereof in the direction perpendicular to the transistor channel direction.

16. The semiconductor integrated circuit of claim 13 , wherein

a P-well and an N-well are separated from each other in a direction perpendicular to the channel direction of the transistors,

the P-type MOS transistors other than those included in the capacitors are provided in the P-well, and the N-type MOS transistors other than those included in the capacitors are provided in the N-well,

the capacitors are provided adjacent to the P-type MOS transistors or the N-type MOS transistors, and

the capacitors are provided in a region having a length in the same direction as the transistor channel direction which is smaller than or equal to that of a region where the P-type MOS transistors or the N-type MOS transistors are formed.

17. The semiconductor integrated circuit of claim 16 , wherein

the capacitance value of the capacitor is changed by changing a size thereof in the direction perpendicular to the transistor channel direction while keeping a length thereof in the same direction as the transistor channel direction.