Memory system having nonvolatile semiconductor storage devices
According to an embodiment, a memory system includes a memory unit, a memory controller, a timer and a timer control unit. The memory unit has nonvolatile first and second chips capable of holding data. The memory controller transfers data received from host equipment simultaneously to the first and second chips. The timer measures a lapse of preset shift time. The timer control unit starts writing of data into the second chip immediately after the lapse of the shift time.
1. A memory system, comprising:
a semiconductor storage unit having nonvolatile first and second semiconductor memory chips capable of holding data;
a memory controller configured to transfer data received from host equipment simultaneously to the first and second semiconductor memory chips;
a measurement unit configured to measure a lapse of a preset first period; and
a control unit configured to start writing of the data into the second semiconductor memory chip immediately after the lapse of the first period; and
a storage region capable of holding a plurality of the first periods different from one another, wherein
the control unit selects any one of the plurality of first periods in the storage region.
2. The memory system according to claim 1 , wherein the control unit starts writing the data into the first semiconductor memory chip immediately after a completion of a write ready condition in the first and second semiconductor memory chips, the control unit starts writing the data into the second semiconductor memory chip immediately after the lapse of the first period.
3. The memory system according to claim 1 , wherein an upper limit is set for the first period.
4. The memory system according to claim 1 , wherein the first period is determined based on a speed of data transfer from the host equipment.
5. The memory system according to claim 1 , wherein the memory system is a memory card.
6. The memory system according to claim 1 , wherein the measurement unit and the control unit are provided in the memory controller.
7. A memory system, comprising:
a semiconductor storage unit having nonvolatile first and second semiconductor memory chips capable of holding data;
a memory controller configured to transfer data received from host equipment alternately to the first and second semiconductor memory chips;
a measurement unit configured to measure a lapse of a preset first period;
a control unit configured to start input of the data into the second semiconductor memory chip immediately after the lapse of the first period; and
a storage region capable of holding a plurality of the first periods different from one another, wherein
the control unit selects any one of the plurality of first periods in the storage region.
8. The memory system according to claim 7 , wherein the control unit starts writing the data into the first semiconductor memory chip immediately after a completion of a write ready condition in the first semiconductor memory chip, a write ready condition in the second semiconductor memory chip is started immediately after the lapse of the first period when a write ready condition in the first semiconductor memory chip is started, the control unit starts writing the data into the second semiconductor memory chip.
9. The memory system according to claim 7 , wherein an upper limit is set for the first period.
10. The memory system according to claim 7 , wherein the first period is determined based on a speed of data transfer from the host equipment.
11. The memory system according to claim 7 , wherein the memory system is a memory card.
12. The memory system according to claim 7 , wherein the measurement unit and the control unit are provided in the memory controller.
13. A memory system, comprising:
a semiconductor storage unit having nonvolatile first and second semiconductor memory chips capable of holding data;
an external interface unit configured to transfer data outputted from host equipment;
a memory controller unit configured to transfer data received through the external interface unit from the host equipment simultaneously or alternately to the first and second semiconductor memory chips based on a data transfer speed between the host equipment and the external interface unit;
a measurement unit configured to measure a lapse of a preset first period; and
a control unit configured to start writing of the data into the second semiconductor memory chip immediately after the lapse of the first period when the memory controller unit transfers the data simultaneously to the first and second semiconductor memory chips, and to start inputting the data to the second semiconductor memory chip immediately after the elapsed time of the first period when the memory controller unit transfers the data alternately to the first and second semiconductor memory chips.
14. The memory system according to claim 13 , wherein an upper limit is set for the first period.
15. The memory system according to claim 13 , further comprising:
a storage region capable of holding a plurality of the first periods different from one another, wherein
the control unit selects any one of the plurality of first periods in the storage region.