Topological insulator-based field-effect transistor
A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.
1. A topological insulator-based field-effect transistor comprising:
a topological insulator layer;
a first and second gate dielectric layers separated by said topological insulator layer;
a first gate contact connected to said first gate dielectric layer;
a second gate contact connected to said second gate dielectric layer;
a first topological insulator surface contact connected to a surface of said topological insulator layer adjacent to said first gate dielectric layer; and
a second topological insulator surface contact connected to a surface of said TI layer adjacent to said second gate dielectric layer.
2. The transistor of claim 1 , wherein said topological insulator layer is a compound selected from the group consisting of Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 .
3. The transistor of claim 1 , wherein said first and second gate dielectric layers are made of silicon dioxide.
4. The transistor of claim 1 , wherein said first and second gate dielectric layers are made of vacuum.
5. The transistor of claim 1 , wherein said topological insulator layer is sufficiently thin to allow the formation of a bandgap.
6. A topological insulator-based field-effect transistor comprising:
a first and second topological insulator layers;
an interlayer dielectric layer connecting said first and second topological insulator layers;
a first gate contact connected to a surface of said first topological insulator layer that is opposite said interlayer dielectric layer;
a second gate contact connected to a surface of said second topological insulator layer that is opposite said interlayer dielectric layer;
a first topological insulator surface contact connected to a surface of said first TI layer adjacent to said interlayer dielectric layer; and
a second topological insulator surface contact connected to a surface of said second TI layer adjacent to said interlayer dielectric layer.
7. The transistor of claim 6 , wherein said first and second TI layers are compounds selected from the group consisting of Bi 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 .
8. The transistor of claim 6 , wherein said interlayer dielectric layer is made of silicon dioxide.
9. The transistor of claim 6 , wherein said interlayer dielectric layer is made of vacuum.
10. The transistor of claim 6 , wherein said first and second topological insulator layers are sufficiently thin to allow the formation of bandgaps.
11. The transistor of claim 1 , wherein each of said first and second topological insulator surface contacts allows independent voltage connection to said topological insulator layer.