Devices formed from a non-polar plane of a crystalline material and method of making the same
View Patent ↗Materials, methods, structures and device including the same can provide a semiconductor device such as an LED using an active region corresponding to a non-polar face or surface of III-V semiconductor crystalline material. In some embodiments, an active diode region contains more non-polar III-V material oriented to a non-polar plane than III-V material oriented to a polar plane. In other embodiments, a bottom region contains more non-polar m-plane or a-plane surface area GaN than polar c-plane surface area GaN facing an active region.
1. A method of making a diode comprising:
forming a first cladding layer including one or more fins of polar crystalline material, wherein major faces of the one or more fins are non-polar;
forming an active region over one or more of said major faces; and
forming a second cladding layer adjacent to said active region.
2. The method of claim 1 , wherein the first cladding layer is configured with an opening, wherein the opening is a trench, recess or hole.
3. The method of claim 1 , wherein the first cladding layer, the active region and the second cladding layer are the same semiconductor crystalline material.
4. The method of claim 1 , wherein the first cladding layer is a different semiconductor crystalline material than at least the active region or the second cladding layer.
5. The method of claim 1 , wherein at least a portion of the active region corresponding to a polar face is removed.
6. The method of claim 1 , wherein at least a portion of the first cladding layer or the second cladding layer corresponding to a polar face is removed.
7. A diode comprising:
one or more fins of polar crystalline material, wherein major faces of the one or more fins are non-polar, said one or more fins constituting a first cladding layer;
an active region formed around said one or more fins; and
a second cladding layer formed adjacent to said active region.
8. The diode of claim 7 , wherein the first cladding layer is configured with an opening, wherein the opening is a trench, recess or hole.
9. The diode of claim 7 , wherein the first cladding layer, the active region and the second cladding layer are the same semiconductor crystalline material.
10. The diode of claim 7 , wherein the first cladding layer is a different semiconductor crystalline material than at least the active region or the second cladding layer.
11. The diode of claim 7 , wherein the first cladding layer, the active region and the second cladding layer are repeated.
12. The diode of claim 7 , wherein at least a portion of the active region corresponding to a polar face is removed.
13. The diode of claim 7 , wherein at least a portion of the first cladding layer or the second cladding layer corresponding to a polar face is removed.
14. A diode comprising:
a first cladding layer of a polar crystalline material including a first surface with one or more holes therein, sidewalls of the one or more holes being non-polar faces of the polar crystalline material;
a second cladding layer opposite the first surface and extending at least partially into the one or more holes; and
an active region interposed between the first and second cladding layers.
15. The diode of claim 14 , wherein the first cladding layer is configured with an opening, wherein the opening is a trench, recess or hole.
16. The diode of claim 14 , wherein the first cladding layer, the active region, and the second cladding layer are the same semiconductor crystalline material.
17. The diode of claim 14 , wherein the first cladding layer is a different semiconductor crystalline material than at least the active region or the second cladding layer.
18. The diode of claim 14 , wherein the first cladding layer, the active region and the second cladding layer are repeated.
19. The diode of claim 14 , wherein at least a portion of the active region corresponding to a polar face is removed.
20. The diode of claim 14 , wherein at least a portion of first cladding layer or the second cladding layer corresponding to a polar face is removed.