IP Library › Granted Patent US 8,631,266
Granted Patent B2
US 8,631,266 · App. 13/050,277 · Granted Jan 14, 2014

Semiconductor memory device and method of controlling the same

Inventors: Ho-Seok Seol (Daegu, KR); Young-Soo Sohn (Seoul, KR); Dong-Min Kim (Hwaseong-si, KR); Kwang-Il Park (Yongin-si, KR); Seung-Jun Bae (Hwaseong-si, KR)
Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,631,266
App. No.
13/050,277
Granted
Jan 14, 2014
Kind
B2
Abstract

A method of tuning a phase of a clock signal includes performing data training on a plurality of data pins through which data are input and output, in synchronization with a data clock signal; determining one of the data pins to be a representative pin; performing clock and data recovery (CDR) on read data of the representative pin; and adjusting a phase of the data clock signal based on the CDR.

Claims (53)

1. A method of a non-transitory computer-readable storage medium tuning a phase of a clock signal, the method comprising:

performing data training on a plurality of data pins through which data are input and output, in synchronization with a data clock signal using a memory controller;

determining one of the data pins to be a representative pin using the memory controller;

performing clock and data recovery (CDR) on read data of the representative pin using the memory controller; and

adjusting a phase of the data clock signal based on the CDR using the memory controller,

wherein performing the CDR comprises:

sampling an edge of the read data to determine a sampled edge of the read data using a sampler in the memory controller;

detecting a phase difference of the sampled edge of the read data and the data clock signal using a decoder in the memory controller; and

adjusting the phase of the data clock signal according to the detected phase difference using a phase interpolator in the memory controller.

2. The method of claim 1 , wherein the phase of the data clock signal is adjusted by synchronizing the data clock signal with the sampled edge of the read data.

3. The method of claim 1 , wherein adjusting the phase of the data clock signal comprises:

converting the detected phase difference to phase information; and

selecting one of a plurality of interpolated clock signals according to the phase information, each of the plurality of interpolated clock signals having a same frequency as the data clock signal, the plurality of interpolated clock signals having regular phase differences with respect to each other.

4. The method of claim 1 , wherein adjusting the phase of the data clock signal comprises:

converting the detected phase difference to phase information; and

calculating a plurality of interpolated clock signals using weights, the weights being determined according to the phase information, each of the interpolated clock signals having a same frequency as the data clock signal, the plurality of interpolated clock signals having regular phase differences with respect to each other.

5. The method of claim 1 , wherein the data clock signal is one of a write clock signal and a data strobe signal.

6. A memory controller, comprising:

a sampler that samples an edge of read data from a representative pin selected from a plurality of data pins, such that a sampled edge of the read data is determined;

a decoder configured to decode a phase difference between the sampled edge of the read data and a data clock signal to provide phase information; and

a phase interpolator configured to adjust a phase of the data clock signal according to the phase information,

wherein the phase interpolator comprises:

a clock generator that generates a plurality of interpolated clock signals, each of the plurality of interpolated clock signals having a same frequency as the data clock signal, the plurality of interpolated clock signals having regular phase differences with respect to each other;

a weight generator that generates a weight for each of the interpolated clock signals in response to the phase information; and

a phase mixer that sums and averages the interpolated clock signals in response to the generated weights to provide the corrected data clock signal.

7. The memory controller of claim 6 , wherein the decoder comprises:

a phase detector that detects the phase difference between the sampled edge of the read data and the data clock signal; and

a converter that converts the phase difference to the phase information.

8. The memory controller of claim 7 , wherein the phase difference is a digital value.

9. The memory controller of claim 6 , wherein the phase mixer includes a plurality of n-type metal oxide semiconductor (NMOS) transistors that receive the weights and the interpolated clock signals.

10. The memory controller of claim 6 , wherein the weights correspond to currents.

11. The memory controller of claim 6 , wherein the phase mixer comprises a plurality of differential input units.

12. A memory system comprising:

a memory device; and

a memory controller configured to exchange data with the memory device through a plurality of data pins in synchronization with a data clock signal, and configured to control the memory device, the memory controller comprising:

a sampler that samples an edge of read data from a representative pin selected from the data pins, such that a sampled edge of the read data is determined;

a decoder configured to decode a phase difference between the sampled edge of the read data and a data clock signal to provide phase information; and

a phase interpolator configured to adjust a phase of the data clock signal according to the phase information,

wherein the memory device comprises:

a memory cell array that stores the data;

a refresh controller that controls refresh operation of the memory cell array; and

a first in first out (FIFO) that stores predefined patterns,

wherein the refresh controller controls the memory cell array such that the predefined patterns are transmitted to the memory controller through the representative pin after the refresh operation of the memory cell array is completed.

13. A method of a non-transitory computer-readable storage medium controlling a memory, comprising:

sampling an edge of read data from a representative pin selected from a plurality of data pins used in communicating with the memory, such that a sampled edge of the read data is determined using a sampler;

decoding a phase difference between the sampled edge and a data clock signal to provide phase information using a decoder; and

adjusting a phase of the data clock signal according to the phase information using a phase interpolator,

wherein adjusting the phase of the data clock signal comprises:

converting the detected phase difference to the phase information; and

selecting one of a plurality of interpolated clock signals according to the phase information to provide a corrected data clock signal, each of the plurality of interpolated clock signals having a same frequency as the data clock signal, the plurality of interpolated clock signals having regular phase differences with respect to each other.

14. The method of claim 13 , further comprising:

performing data training on the plurality of data pins through which data are communicated with the memory, in synchronization with a data clock signal; and

determining one of the data pins to be the representative pin.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2011
From: SEOL, HO-SEOK; SOHN, YOUNG-SOO; KIM, DONG-MIN; PARK, KWANG-IL; BAE, SEUNG-JUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 025974/0932 →
Priority Claims (1)
KR 10-2010-0098054 · Oct 8, 2010 · national
Continuity (2)
Provisional Application 61320567 · Apr 2, 2010
Related Publication 20110243289A1 · Oct 6, 2011