IP Library › Granted Patent US 8,632,663
Granted Patent B2
US 8,632,663 · App. 12/995,551 · Granted Jan 21, 2014

Hydrogen production device and method for producing hydrogen

Inventors: Akihito Yoshida (Osaka, JP); Shunsuke Sata (Osaka, JP); Masaki Kaga (Osaka, JP)
Assignee: Sharp Kabushiki Kaisha
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Quick Facts
Patent No.
US 8,632,663
App. No.
12/995,551
Granted
Jan 21, 2014
Kind
B2
Abstract

There is provided a hydrogen production device high in light use efficiency and capable of producing hydrogen with high efficiency. The hydrogen production device according to the present invention includes a photoelectric conversion part having a light acceptance surface and a back surface, a first gas generation part provided on the back surface, and a second gas generation part provided on the back surface, in which one of the first gas generation part and the second gas generation part is a hydrogen generation part to generate H 2 from an electrolytic solution, another one thereof is an oxygen generation part to generate O 2 from the electrolytic solution, the first gas generation part is electrically connected to the back surface, and the second gas generation part is electrically connected to the light acceptance surface via a first conductive part.

Claims (58)

1. A hydrogen production device comprising:

a translucent substrate;

a photoelectric conversion part having a light acceptance surface and a back surface, and provided on the translucent substrate;

a first gas generation part provided on the back surface;

a second gas generation part provided on the back surface;

a plate provided over the first gas generation part and the second gas generation part so as to be opposed to the substrate;

a space is provided between each of the first gas generation part and the second gas generation part, and the plate; and

a partition wall to separate a space between the first gas generation part and the plate and a space between the second gas generation part and the plate, wherein

one of the first gas generation part and the second gas generation part is a hydrogen generation part to generate H 2 from an electrolytic solution, and another one thereof is an oxygen generation part to generate O 2 from the electrolytic solution,

the first gas generation part is electrically connected to the back surface, and the second gas generation part is electrically connected to the light acceptance surface via a first conductive part, and

the space between the first gas generation part and the plate and the space between the second gas generation part and the plate were connected so that the electrolytic solution flows between the spaces.

2. The device according to claim 1 , wherein

the first conductive part includes a first electrode being in contact with the light acceptance surface, and a second conductive part being in contact with each of the first electrode and the second gas generation part.

3. The device according to claim 1 , further comprising a second electrode provided between the back surface of the photoelectric conversion part and the first gas generation part.

4. The device according to claim 1 , wherein

the photoelectric conversion part has a plurality of photoelectric conversion layers each formed of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer.

5. The device according to claim 4 , wherein

the plurality of photoelectric conversion layers have different bandgaps.

6. The device according to claim 1 , wherein

the hydrogen generation part and the oxygen generation part include a catalyst for a reaction to generate H 2 from the electrolytic solution and a catalyst for a reaction to generate O 2 from the electrolytic solution, respectively.

7. The device according to claim 6 , wherein

at least one of the hydrogen generation part and the oxygen generation part has a catalytic surface area larger than an area of the light acceptance surface.

8. The device according to claim 6 , wherein

at least one of the hydrogen generation part and the oxygen generation part is formed of a catalyst-supporting porous conductor.

9. The device according to claim 6 , wherein

the hydrogen generation part includes a hydrogen generation catalyst containing at least one of Pt, Ir, Ru, Pd, Rh, Au, Fe, Ni, and Se, as a hydrogen generation catalyst.

10. The device according to claim 6 , wherein

the oxygen generation part includes an oxygen generation catalyst containing at least one of Mn, Ca, Zn, Co, and Ir, as an oxygen generation catalyst.

11. A method for producing hydrogen and oxygen, the method comprising the steps of:

setting the hydrogen production device according to claim 1 such that the light acceptance surface is tilted with respect to a horizontal surface;

generating hydrogen and oxygen from the hydrogen generation part and the oxygen generation part, respectively, by introducing the electrolytic solution from a lower part of the hydrogen production device to the hydrogen production device, and irradiating the light acceptance surface with sunlight; and

exhausting the hydrogen and oxygen from an upper part of the hydrogen production device.

12. A hydrogen production device comprising:

a photoelectric conversion part having a light acceptance surface and a back surface;

a first gas generation part provided on the back surface; and

a second gas generation part provided on the back surface, wherein

one of the first gas generation part and the second gas generation part is a hydrogen part to generate H 2 from an electrolytic solution and another one thereof is an oxygen generation part to generate O 2 from the electrolytic solution, and

the first gas generation part is electrically connected to the back surface, and the second gas generation part is electrically connected to the light acceptance surface via a first conductive part,

the second gas generation part is provided on the back surface of the photoelectric conversion part via an insulation part,

the first conductive part includes a first electrode being in contact with the light acceptance surface, and a second conductive part being in contact with each of the first electrode and the second gas generation part, and

the second conductive part penetrates both the photoelectric conversion part and the insulation part.

13. The device according to claim 12 , wherein

the second conductive part is provided in a contact hole penetrating both the photoelectric conversion part and the insulation part.

14. The device according to claim 13 , wherein

the number of the contact hole is one or more, and

a total cross-section area of the contact holes is 0.1% or more to 10% or less of an area of the light acceptance surface.

15. The device according to claim 12 , wherein

the photoelectric conversion part is provided on a translucent substrate.

16. The device according to claim 12 , wherein

the photoelectric conversion part is provided on a translucent substrate,

a plate is further provided over the first gas generation part and the second gas generation part so as to be opposed to the substrate, and

a space is provided between each of the first gas generation part and the second gas generation part, and the plate.

17. The device according to claim 16 , further comprising a partition wall to separate a space between the first gas generation part and the plate and a space between the second gas generation part and the plate.

18. The device according to claim 17 , wherein

the partition wall contains an ion exchanger.

19. The device according to claim 12 , wherein

the second conductive part has a contact face contacting with the first electrode, and a back face placed on the other side of the contact face, and

the second gas generation part entirely covers the back face.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2010
From: YOSHIDA, AKIHITO; SATA, SHUNSUKE; KAGA, MASAKI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 025415/0128 →
Priority Claims (1)
JP 2009-274566 · Dec 2, 2009 · national
Continuity (1)
Related Publication 20110214996A1 · Sep 8, 2011