Method for metal deposition using hydrogen plasma

1. A method of depositing a metal layer on a semiconductor substrate comprising:

placing the substrate on a substrate support in a chamber of a reactor;

depositing a metal precursor layer on the substrate; and

reducing the metal precursor layer to form a metal layer by exposing the metal precursor layer to a hydrogen plasma comprising a precursor gas including H 2 generated by alternating frequencies comprising a low frequency and a high frequency, the low frequency about 13.56 MHz and the high frequency about 40 MHz,

wherein the deposition of the metal precursor layer and reducing the metal precursor layer occur in repeated cycles until the desired thickness of the metal layer are formed.

2. The method of claim 1 , wherein the hydrogen plasma further comprises one or more of Ar, NH 3 , N 2 and He.

3. The method of claim 2 , wherein the metal layer deposited on the substrate comprises a metal gate layer and exposing the metal precursor layer to a hydrogen plasma generated by alternating frequencies of about 13.56 MHz and about 40 MHz prevents the hydrogen plasma from penetrating the metal precursor layer and damaging the substrate.

4. The method of claim 2 , wherein the substrate comprises a low K material and exposing the metal precursor layer to a hydrogen plasma generated by alternating frequencies of about 13.56 MHz and about 40 MHz prevents the hydrogen plasma from penetrating the metal precursor layer and degrading the low K material.

5. The method of claim 2 , wherein the substrate comprises silicon and a metal silicide layer disposed on the silicon creating a silicon/silicide layer interface and exposing the metal precursor layer to a hydrogen plasma generated by alternating frequencies of about 13.56 MHz and about 40 MHz prevents the hydrogen plasma from penetrating the metal precursor layer and damaging the silicon/silicide layer interface.

6. The method of claim 2 , wherein exposing the metal precursor layer to a hydrogen plasma generated by alternating frequencies of about 13.56 MHz and about 40 MHz comprises:

introducing a hydrogen gas into the chamber;

supplying power to a power source operating at a frequency of about 13.56 MHz to generate a hydrogen plasma within the chamber for a first cycle; and

supplying power to a power source operating at a frequency of about 40 MHz to generate a hydrogen plasma within the chamber for a second cycle.

7. The method of claim 6 , wherein the power supplied to the power source operating at a frequency of about 13.56 MHz is in the range from about 200 W to about 2000 W and the power supplied to the power source operating at a frequency of about 40 MHz is in the range from about 200 W to about 2000 W.

8. The method of claim 1 , the deposited metal precursor layers are reduced after deposition by exposing the deposited metal precursor layer to about 40 MHz frequency-generated hydrogen plasma occurs until a metal layer having a thickness in the range from about 0.2 Å to about 3 Å is formed.

9. The method of claim 8 , wherein after formation of a metal layer having a thickness in the range from about 0.2 Å to about 3 Å, subsequently deposited metal precursor layers are reduced after deposition by exposing the deposited metal precursor layer to about 13.56 MHz frequency-generated hydrogen plasma occurs until a metal layer having a thickness in the range from about 2 Å to about 70 Å is formed.

10. A method of depositing a metal layer on a semiconductor substrate comprising:

placing the substrate on a substrate support in a chamber of a reactor;

depositing a metal precursor layer on the substrate; and

reducing the metal precursor layer to form a metal layer by exposing the metal precursor layer to a high frequency-generated hydrogen plasma comprising a precursor gas including H 2 , the hydrogen plasma generated at a frequency of about 40 MHz,

wherein the metal layer deposited on the substrate comprises a metal gate layer and exposing the metal precursor layer to about 40 MHz frequency-generated hydrogen plasma prevents the hydrogen plasma from penetrating the metal precursor layer and damaging the substrate.

11. The method of claim 10 , wherein the hydrogen plasma further comprises one or more of Ar, NH 3 , N 2 and He.

12. The method of claim 11 , further comprising removing the substrate from the chamber after deposition of the metal precursor layer and reduction of the metal precursor layer; introducing a second hydrogen gas into the chamber; and supplying power to a power source operating at a frequency of 13.56 MHz to generate a second hydrogen plasma within the chamber.

13. A method of depositing a metal layer on a semiconductor substrate comprising:

placing the substrate on a substrate support in a chamber of a reactor;

depositing a metal precursor layer on the substrate; and

reducing the metal precursor layer to form a metal layer by exposing the metal precursor layer to a high frequency-generated hydrogen plasma generated at a frequency of about 40 MHz,

wherein (a) the substrate comprises a low-K material and exposing the metal precursor layer to the plasma prevents the hydrogen plasma from penetrating the metal precursor layer and degrading the low-K material; or (b) the substrate comprises silicon and a metal silicide layer disposed on the silicon creating a silicon/silicide layer interface and exposing the metal precursor layer to the plasma prevents the hydrogen plasma from penetrating the metal precursor layer and damaging the silicon/silicide layer interface.

14. The method of claim 13 , wherein the hydrogen plasma comprises a precursor gas including H 2 or a mixture of H 2 and one or more of Ar, NH 3 , N 2 and He.

15. The method of claim 14 , wherein exposing the metal precursor layer to a dual frequency-generated hydrogen plasma comprises exposing the metal precursor layer to a high frequency generated plasma.

16. The method of claim 14 , wherein exposing the metal precursor layer to a dual frequency-generated hydrogen plasma comprises:

introducing a hydrogen gas into the chamber;

supplying power to a power source operating at a low frequency to generate a first hydrogen plasma within the chamber; and

simultaneously supplying power to a power source operating at a high frequency to generate a second hydrogen plasma within the chamber.