Method for fabricating a semiconductor chip and semiconductor chip
A method includes structuring a semiconductor substrate to produce a number semiconductor chips. Each of the semiconductor chips includes a first main face and a number of side faces. An indentation is formed at a transition between the first main face and the side faces.
1. A method for fabricating a semiconductor chip, the method comprising:
structuring a semiconductor substrate to produce a plurality of semiconductor chips so that each semiconductor chip comprises a first main face and a plurality of side faces; and
forming an indentation at a transition between the first main face and the side faces of each semiconductor chip; and
grinding the plurality of semiconductor chips after structuring the semiconductor substrate.
2. The method according to claim 1 , wherein forming the indentation comprises performing an etching step.
3. The method according to claim 2 , wherein the etching step comprises an isotropic etching step.
4. The method according to claim 1 , wherein structuring the semiconductor substrate comprises performing an etching step.
5. The method according to claim 4 , wherein the etching step comprises an anisotropic etching step.
6. The method according to claim 1 , wherein structuring the semiconductor substrate occurs before forming the indentation.
7. The method according to claim 1 , wherein structuring the semiconductor substrate occurs after forming the indentation.
8. The method according to claim 1 , wherein each of the semiconductor chips comprises a second main face opposite to the first main face, the method further comprising depositing a metal layer onto the second main face.
9. The method according to claim 1 , further comprising grinding the semiconductor substrate.
10. A method for fabricating a semiconductor chip, the method comprising:
structuring a semiconductor substrate to produce a plurality of semiconductor chips so that each semiconductor chip comprises a first main face and a plurality of side faces; and
forming a curved chip surface connected between the first main face and the side faces of each semiconductor chip after structuring the semiconductor substrate, wherein forming the curved chip surface comprises forming an indentation at a transition between the first main face and the side faces.
11. The method according to claim 10 , wherein forming the curved chip surface comprises performing an etching step.
12. The method according to claim 11 , wherein the etching step comprises an isotropic etching step.
13. The method according to claim 10 , wherein structuring the semiconductor substrate comprises performing an etching step.
14. The method according to claim 13 , wherein the etching step comprises an anisotropic etching step.
15. The method according to claim 10 , wherein each of the semiconductor chips comprises a second main face opposite to the first main face, the method further comprising depositing a metal layer onto the second main face.
16. The method according to claim 10 , further comprising grinding the semiconductor substrate.
17. The method according to claim 10 , further comprising grinding the semiconductor chips after structuring the semiconductor substrate.
18. A semiconductor chip, comprising:
a first main face;
a second main face opposite the first main face;
a plurality of side faces;
an indentation at a transition between the first main face and the side faces; and
a metal layer disposed over the second main face and on the plurality of side faces.
19. The semiconductor chip according to claim 18 , wherein the indentation comprises a circumferential indentation.
20. The semiconductor chip according to claim 18 , wherein the metal layer is not disposed on a surface of the indentation.
21. The semiconductor chip according to claim 18 , wherein the indentation comprises a depth of at least i/AR, wherein i is a vertical extension of the indentation and AR is an aspect ratio.
22. A semiconductor chip, comprising:
a first main face;
a second main face opposite to the first main face;
a plurality of side faces;
a curved chip surface located between the first main face and the side faces of the semiconductor chip; and
a metal layer disposed over the second main face and on the plurality of side faces.
23. The semiconductor chip according to claim 22 , wherein the curved chip surface is part of an indentation at a transition between the first main face and the side faces.
24. The semiconductor chip according to claim 23 , wherein the indentation comprises a depth of at least i/AR, wherein i is a vertical extension of the indentation and AR is an aspect ratio.
25. The semiconductor chip according to claim 11 , wherein the metal layer is not disposed on the curved chip surface.
26. A method for fabricating a semiconductor chip, the method comprising:
structuring a semiconductor substrate to produce a plurality of semiconductor mesas so that each semiconductor mesa comprises a first main face and a plurality of side faces;
forming a curved chip surface connected between the first main face and the side faces of the semiconductor mesas; and
forming a plurality of semiconductor chips by grinding the semiconductor substrate after structuring the semiconductor substrate.
27. A method for fabricating a semiconductor chip, the method comprising:
structuring a semiconductor substrate to produce a plurality of semiconductor chips, wherein each semiconductor chip comprises a first main face and a plurality of side faces;
forming a curved chip surface connected between the first main face and the side faces of each semiconductor chip after structuring the semiconductor substrate; and
depositing a metal layer onto the plurality of side faces.