Reduction-resistant dielectric composition and ceramic electronic component including the same
There are provided a reduction-resistant dielectric composition and a ceramic electronic component including the same. The reduction-resistant dielectric composition may include a BaTiO 3 -based matrix powder, 0.1 to 1.0 moles of a transition metal oxide or transition metal carbonates, based on 100 moles of the matrix powder, and 0.1 to 3.0 moles of a sintering aid including silicon oxide (SiO 2 ). The ceramic electronic component including the reduction-resistant dielectric composition may have a high capacitance and superior reliability.
1. A reduction-resistant dielectric composition, which does not include both a fixed valence acceptor atom and a rare earth atom, comprising:
a BaTiO 3 -based matrix powder;
0.1 to 1.0 moles of a transition metal oxide or transition metal carbonate, based on 100 moles of the matrix powder; and
0.1 to 3.0 moles of a sintering aid including silicon oxide (SiO 2 ), wherein
the BaTiO 3 -based matrix powder includes BaCO 3 or TiO 2 .
2. The reduction-resistant dielectric composition of claim 1 , wherein an average particle size of the matrix powder is 0.05 to 0.5 μm.
3. The reduction-resistant dielectric composition of claim 1 , wherein the transition metal element is at least one selected from a group consisting of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu), and zinc (Zn).
4. A ceramic electronic component, comprising:
a ceramic body in which a plurality of dielectric layers are laminated;
an internal electrode formed inside the ceramic body, and including a base metal; and
an external electrode formed on an outer surface of the ceramic body, and electrically connected to the internal electrode,
wherein the dielectric layer includes a BaTiO 3 -based matrix powder, 0.1 to 1.0 moles of a transition metal oxide or transition metal carbonate based on 100 moles of the matrix powder, and 0.1 to 3.0 moles of a sintering aid including silicon oxide (SiO 2 ),
wherein the BaTiO 3 -based matrix powder includes BaCO 3 or TiO 2 , and
wherein the dielectric layer does not include both a fixed valence acceptor atom and a rare earth atom.
5. The ceramic electronic component of claim 4 , wherein a thickness of each of the plurality of dielectric layers is 0.1 to 10.0 μm.
6. The ceramic electronic component of claim 4 , wherein the internal electrode includes nickel (Ni) or a nickel (Ni) alloy.