In—Ga—Zn type oxide sputtering target
A sputtering target including oxide A shown below and indium oxide (In 2 O 3 ) having a bixbyite crystal structure: Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays).
1. A sputtering target comprising oxide A shown below and indium oxide (In 2 O 3 ) having a bixbyite crystal structure:
Oxide A: an oxide which comprises an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays).
2. The sputtering target according to claim 1 , wherein the atomic ratio of an indium element (In), a gallium element (Ga) and a zinc element (Zn) satisfies the following formulas (1) and (2):
0.10≦Zn/(In+Ga+Zn)≦0.45 (1)
0.05<Ga/(In+Ga+Zn)<0.18 (2).
3. The sputtering target according to claim 2 , wherein the atomic ratio of an indium element (In) and a gallium element (Ga) satisfies the following formula (3):
0.14≦Ga/(In+Ga) (3).
4. The sputtering target according to claim 3 , wherein all mental elements contained consist essentially of In, Ga and Zn.
5. An oxide thin film produced by using the sputtering target according claim 3 .
6. The sputtering target according to claim 2 , wherein all mental elements contained consist essentially of In, Ga and Zn.
7. An oxide thin film produced by using the sputtering target according claim 6 .
8. The sputtering target according to claim 2 which has a resistance of 10 mΩcm or less and a relative density of 95% or more.
9. An oxide thin film produced by using the sputtering target according claim 2 .
10. The sputtering target according to claim 1 , wherein the atomic ratio of an indium element (In) and a gallium element (Ga) satisfies the following formula (3):
0.14≦Ga/(In+Ga) (3).
11. The sputtering target according to claim 10 , wherein all mental elements contained consist essentially of In, Ga and Zn.
12. An oxide thin film produced by using the sputtering target according claim 11 .
13. The sputtering target according to claim 10 which has a resistance of 10 mΩcm or less and a relative density of 95% or more.
14. An oxide thin film produced by using the sputtering target according claim 10 .
15. The sputtering target according to claim 1 , wherein all mental elements contained consist essentially of In, Ga and Zn.
16. The sputtering target according to claim 15 which has a resistance of 10 mΩcm or less and a relative density of 95% or more.
17. An oxide thin film produced by using the sputtering target according claim 15 .
18. The sputtering target according to claim 1 which has a resistance of 10 mΩcm or less and a relative density of 95% or more.
19. An oxide thin film produced by using the sputtering target according claim 18 .
20. An oxide thin film produced by using the sputtering target according to claim 1 .