Resistive random access memory and method for manufacturing the same
A resistive random access memory including, an insulating layer, a hard mask layer, a bottom electrode, a memory cell and a top electrode is provided. The insulating layer is disposed on the bottom electrode. The insulating layer has a contact hole having a first width. The hard mask layer has an opening. A portion of the memory cell is exposed from the opening and has a second width smaller than the first width. The top electrode is disposed on the insulating layer and is coupled with the memory cell.
1. A manufacturing method of resistive random access memory, comprising:
forming an insulating layer, wherein the insulating layer has a contact hole having a first width;
forming a memory element for storing data by oxidizing a material, the memory element for storing data having a second width positioned beneath the insulating layer, wherein the first width is larger than the second width; and
forming a top electrode coupled with the memory element for storing data.
2. The manufacturing method according to claim 1 , further comprising forming an anti-oxidation barrier material, wherein the insulating layer is formed on the anti-oxidation barrier material.
3. The manufacturing method according to claim 2 , further comprising etching the anti-oxidation barrier material so as to form an anti-oxidation barrier having a second opening, wherein the second opening has the second width.
4. The manufacturing method according to claim 1 , further comprising forming a bottom electrode, wherein the insulating layer is formed on the bottom electrode.
5. The manufacturing method according to claim 4 , wherein the bottom electrode comprises the material, and the method further comprises oxidizing the bottom electrode prior to the step of forming the memory element for storing data.
6. The manufacturing method according to claim 4 , wherein the bottom electrode comprises the material, and the step of forming the memory element for storing data further comprises oxidizing the bottom electrode so as to form an oxide layer having the memory element for storing data positioned therein.
7. The manufacturing method according to claim 1 , wherein prior to the step of forming the memory element for storing data, the method further comprises forming a spacer in the contact hole, wherein the spacer has a first opening having the second width.
8. The manufacturing method according to claim 1 , wherein the step of forming the insulating layer comprises:
depositing the insulating layer;
planarizing the insulating layer; and
etching the insulating layer to form the contact hole.
9. The manufacturing method according to claim 2 , wherein the anti-oxidation barrier material is a nitride layer.
10. The manufacturing method according to claim 2 , wherein the memory element for storing data is formed beneath the anti-oxidation barrier material.
11. The manufacturing method according to claim 5 , wherein the bottom electrode is oxidized by plasma under a mixed gas environment of pure oxygen (O 2 ), oxygen and argon mixture (O 2 /Ar), or argon, oxygen and nitrogen mixture (Ar/O 2 /N 2 ).
12. The manufacturing method according to claim 5 , wherein the bottom electrode is oxidized by a furnace or a rapid thermal processing (RTP) system with a temperature of 200-300° C.
13. The manufacturing method according to claim 7 , further comprising removing the spacer prior to the step of forming the memory element for storing data.
14. The manufacturing method according to claim 13 , wherein the step of removing the spacer is prior to the step of oxidizing the material.
15. The manufacturing method according to claim 1 , wherein the top electrode is disposed on the insulating layer and within the contact hole.