IP Library › Granted Patent US 8,643,586
Granted Patent B2
US 8,643,586 · App. 13/904,147 · Granted Feb 4, 2014

Liquid crystal display device

Inventor: Atsushi Umezaki (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,643,586
App. No.
13/904,147
Granted
Feb 4, 2014
Kind
B2
Abstract

A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.

Claims (71)

1. A semiconductor device comprising:

first to fifth transistors; and

first to seventh wirings,

wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wiring,

wherein one of a source and a drain of the second transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,

wherein a gate of the second transistor is electrically connected to the fourth wiring,

wherein one of a source and a drain of the third transistor is electrically connected to the fifth wiring,

wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor,

wherein a gate of the third transistor is electrically connected to the sixth wiring,

wherein one of a source and a drain of the fourth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a gate of the first transistor,

wherein a gate of the fourth transistor is electrically connected to the fourth wiring,

wherein one of a source and a drain of the fifth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the second wiring, and

wherein a gate of the fifth transistor is electrically connected to the seventh wiring.

2. The semiconductor device according to claim 1 , further comprising a capacitor,

wherein one electrode of the capacitor is electrically connected to the gate of the first transistor, and

wherein the other electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor.

3. The semiconductor device according to claim 1 , wherein a channel formation region of each of the first to fifth transistors comprises an oxide semiconductor.

4. The semiconductor device according to claim 3 , wherein the oxide semiconductor comprises indium and zinc.

5. A display module comprising the semiconductor device according to claim 1 .

6. An electronic appliance comprising the display module according to claim 5 .

7. A semiconductor device comprising:

first to fifth transistors; and

first to seventh wirings,

wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wiring,

wherein one of a source and a drain of the second transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,

wherein a gate of the second transistor is electrically connected to the fourth wiring,

wherein one of a source and a drain of the third transistor is electrically connected to the fifth wiring,

wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor,

wherein a gate of the third transistor is electrically connected to the sixth wiring,

wherein one of a source and a drain of the fourth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a gate of the first transistor,

wherein a gate of the fourth transistor is electrically connected to the fourth wiring,

wherein one of a source and a drain of the fifth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the second wiring,

wherein a gate of the fifth transistor is electrically connected to the seventh wiring, and

wherein a channel width of each of the second transistor, the third transistor, and the fourth transistor is smaller than a channel width of the first transistor.

8. The semiconductor device according to claim 7 , further comprising a capacitor,

wherein one electrode of the capacitor is electrically connected to the gate of the first transistor, and

wherein the other electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor.

9. The semiconductor device according to claim 7 , wherein a channel formation region of each of the first to fifth transistors comprises an oxide semiconductor.

10. The semiconductor device according to claim 9 , wherein the oxide semiconductor comprises indium and zinc.

11. A display module comprising the semiconductor device according to claim 7 .

12. An electronic appliance comprising the display module according to claim 11 .

13. A semiconductor device comprising:

first to fourth transistors; and

first to fifth wirings,

wherein one of a source and a drain of the first transistor is electrically connected to the first wiring,

wherein the other of the source and the drain of the first transistor is electrically connected to the second wiring,

wherein one of a source and a drain of the second transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the second transistor is electrically connected to the second wiring,

wherein a gate of the second transistor is electrically connected to the fourth wiring,

wherein one of a source and a drain of the third transistor is electrically connected to the fifth wiring,

wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor,

wherein a gate of the third transistor is electrically connected to the fifth wiring,

wherein one of a source and a drain of the fourth transistor is electrically connected to the third wiring,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the gate of the first transistor,

wherein a gate of the fourth transistor is electrically connected to the fourth wiring, and

wherein a channel width of each of the second transistor, the third transistor, and the fourth transistor is smaller than a channel width of the first transistor.

14. The semiconductor device according to claim 13 , further comprising a capacitor,

wherein one electrode of the capacitor is electrically connected to the gate of the first transistor, and

wherein the other electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor.

15. The semiconductor device according to claim 13 , wherein a channel formation region of each of the first to fourth transistors comprises an oxide semiconductor.

16. The semiconductor device according to claim 15 , wherein the oxide semiconductor comprises indium and zinc.

17. A display module comprising the semiconductor device according to claim 13 .

18. An electronic appliance comprising the display module according to claim 17 .

Priority Claims (1)
JP 2006-236392 · Aug 31, 2006 · national
Continuity (4)
Continuation 13307131 · Nov 30, 2011
Continuation 12977556 · Dec 23, 2010
Division 11845415 · Aug 27, 2007
Related Publication 20130264566A1 · Oct 10, 2013