Apparatuses and methods for operating a memory device
Subject matter described pertains to apparatuses and methods for operating a memory device.
1. A method of operating a memory device comprising:
identifying a memory cell as problematic based at least partially on a comparison showing a mismatch between data known to have been written to the memory cell and data subsequently read from the memory cell;
storing a location of the problematic memory cell in the memory device; and
storing an indicator in the memory device to indicate whether the location of the problematic memory cell is a location of a problematic memory cell of a memory cache of the memory device or a location of a problematic memory cell of a memory array of the memory device.
2. The method of claim 1 , wherein the location comprises an address of a group of memory cells.
3. The method of claim 2 , wherein the group of memory cells comprises a column of memory cells.
4. The method of claim 2 , wherein the group of memory cells comprises a row of memory cells.
5. The method of claim 2 , wherein the memory device comprises a NAND flash memory device.
6. The method of claim 1 , wherein the location comprises an address of a single memory cell.
7. The method of claim 1 , further comprising:
storing the location of the problematic memory cell with the indicator.
8. The method of claim 7 , wherein storing the location of the problematic memory cell with the indicator comprises storing a column address with the indicator.
9. The method of claim 1 , wherein the memory device includes a first and a second memory array that share access to the memory cache; and
wherein the storing an indicator comprises storing an indicator to differentiate between the memory cache and the arrays.
10. The method of claim 1 , wherein the storing an indicator further comprises:
storing the indicator as a state of a fuse.
11. The method of claim 1 , wherein the storing the indicator further comprises:
storing the indicator in a manner to provide access to a redundant column of memory cells of the memory array to replace the problematic memory cell in the event that a match is detected between an input address and a stored address corresponding to the problematic memory cell.
12. The method of claim 11 , wherein storing the indicator in a manner to provide access to a redundant column of memory cells of the memory array to replace the problematic memory cell in the event that a match is detected between an input address and a stored address corresponding to the problematic memory cell comprises storing the indicator in a manner to provide access to the redundant column of memory cells of the memory array to replace a problematic column of memory cells in the event that a match is detected between an input address and a stored address corresponding to the problematic column of memory cells.
13. The method of claim 12 , wherein if the indicator indicates the location of the problematic memory cell is in the memory cache, the indicator is stored in a manner to provide access to at least two redundant columns of memory cells of the memory array in the event that a match is detected.
14. The method of claim 12 , wherein if the indicator indicates the location of the problematic memory cell is in the memory array, only one redundant column of memory cells of the memory array replaces the problematic memory cell in the event that a match is detected.
15. The method of claim 1 , wherein storing an indicator in the memory device comprises storing the indicator in a content addressable memory of the memory device.
16. An apparatus comprising:
a memory cache;
memory arrays including redundant memory columns and configured to share the memory cache;
means for locating a problematic memory cell; and
means for indicating whether the location of the problematic memory cell is a location of a problematic memory cell of the memory cache or a location of a problematic memory cell of the memory arrays, wherein the problematic memory cell has a mismatch between data known to have been written to the memory cell and data subsequently read from the memory cell.
17. The method of claim 1 , wherein the comparison is performed as part of a production yield testing of the memory device.
18. The method of claim 1 , wherein the location of the problematic memory cell comprises an address of the problematic memory cell and the indicator comprises at least one bit of data, and wherein storing the indicator comprises storing the at least one bit of data with the address of the problematic memory cell.