Method for manufacturing semiconductor device and display device
View Patent ↗It is an object to provide a method for manufacturing a display device suitable for mass production without complicating a manufacturing process of a thin film transistor. A microcrystalline semiconductor film is formed by use of a microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz using silicon hydride or silicon halide as a source gas, and a thin film transistor using the microcrystalline semiconductor film and a display element connected to the thin film transistor are formed. Since plasma which is generated using microwaves with a frequency of greater than or equal to 1 GHz has high electron density, silicon hydride or silicon halide which is a source gas can be easily dissociated, so that mass productivity of the display device can be improved.
1. A method for manufacturing a semiconductor device, comprising the steps of:
introducing a non-source gas into a microwave plasma CVD apparatus;
generating a plasma with the non-source gas by the microwave plasma CVD apparatus;
introducing a source gas after generating the plasma; and
forming a microcrystalline semiconductor film of a thin film transistor with the source gas by the microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz,
wherein the microwave plasma CVD apparatus is provided with a plurality of waveguides which is over a plurality of dielectric plates,
wherein a first gas pipe and a second gas pipe are provided to intersect with each other between a substrate and the plurality of dielectric plates,
wherein the non-source gas is released from an outlet of the first gas pipe provided on the plurality of dielectric plates side, and
wherein the source gas is released from an outlet of the second gas pipe provided on the substrate side.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the microcrystalline semiconductor film is used as at least a channel formation region of the thin film transistor.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the microcrystalline semiconductor film is a microcrystalline silicon film.
4. A method for manufacturing a semiconductor device, comprising the steps of:
introducing a non-source gas into a microwave plasma CVD apparatus;
generating a plasma with the non-source gas by the microwave plasma CVD apparatus;
introducing a source gas after generating the plasma; and
forming a microcrystalline semiconductor film of a thin film transistor with the source gas by the microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz which is provided with a plurality of microwave generation units and a plurality of dielectric plates that propagates microwaves generated in the plurality of microwave generation units,
wherein the microwave plasma CVD apparatus is provided with a plurality of waveguides which is over the plurality of dielectric plates,
wherein a first gas pipe and a second gas pipe are provided to intersect with each other between a substrate and the plurality of dielectric plates,
wherein the non-source gas is released from an outlet of the first gas pipe provided on the plurality of dielectric plates side, and
wherein the source gas is released from an outlet of the second gas pipe provided on the substrate side.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein the microcrystalline semiconductor film is used as at least a channel formation region of the thin film transistor.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein the microcrystalline semiconductor film is a microcrystalline silicon film.
7. A method for manufacturing a display device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
introducing a non-source gas into a microwave plasma CVD apparatus;
generating a plasma with the non-source gas by the microwave plasma CVD apparatus;
introducing a source gas after generating the plasma;
forming a microcrystalline semiconductor film with the source gas over the gate insulating film;
forming a semiconductor film to which an impurity element imparting one conductivity type is added over the microcrystalline semiconductor film;
etching the microcrystalline semiconductor film and the semiconductor film to which the impurity element imparting one conductivity type is added, to form an island shape microcrystalline semiconductor film functioning as a channel formation region and an island shape semiconductor film to which the impurity element imparting one conductivity type is added;
forming a source electrode and a drain electrode over the island shape semiconductor film to which the impurity element imparting one conductivity type is added;
etching the island shape semiconductor film to which the impurity element imparting one conductivity type is added using the source electrode and the drain electrode as masks, to divide into a source region and a drain region; and
forming a pixel electrode in contact with the source electrode or the drain electrode,
wherein the microcrystalline semiconductor film and the semiconductor film to which the impurity element imparting one conductivity type is added are formed by the microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz which is provided with a plurality of microwave generation units and a plurality of dielectric plates that propagates microwaves generated in the plurality of microwave generation units,
wherein the microwave plasma CVD apparatus is provided with a plurality of waveguides which is over the plurality of dielectric plates,
wherein a first gas pipe and a second gas pipe are provided to intersect with each other between the substrate and the plurality of dielectric plates,
wherein the non-source gas is released from an outlet of the first gas pipe provided on the plurality of dielectric plates side, and
wherein the source gas is released from an outlet of the second gas pipe provided on the substrate side.
8. The method for manufacturing a display device according to claim 7 , wherein the microcrystalline semiconductor film is microcrystalline silicon film.
9. The method for manufacturing a display device according to claim 7 , wherein the display device is a liquid crystal display device.
10. The method for manufacturing a display device according to claim 7 , wherein the display device is a light-emitting device.
11. A method for manufacturing a display device, comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
introducing a non-source gas into a microwave plasma CVD apparatus;
generating a plasma with the non-source gas by the microwave plasma CVD apparatus;
introducing a source gas after generating the plasma;
forming a microcrystalline semiconductor film with the source gas over the gate insulating film;
forming a channel protective film over the microcrystalline semiconductor film;
forming a semiconductor film to which an impurity element imparting one conductivity type is added, over the microcrystalline semiconductor film and the channel protective film;
etching the microcrystalline semiconductor film and the semiconductor film to which the impurity element imparting one conductivity type is added, to form an island shape microcrystalline semiconductor film functioning as a channel formation region and an island shape semiconductor film to which the impurity element imparting one conductivity type is added;
forming a source electrode and a drain electrode over the island shape semiconductor film to which the impurity element imparting one conductivity type is added;
etching the island shape semiconductor film to which the impurity element imparting one conductivity type is added using the source electrode and the drain electrode as masks, to divide into a source region and a drain region; and
forming a pixel electrode in contact with the source electrode or the drain electrode,
wherein the microcrystalline semiconductor film and the semiconductor film to which the impurity element imparting one conductivity type is added are formed by the microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz which is provided with a plurality of microwave generation units and a plurality of dielectric plates that propagates microwaves generated in the plurality of microwave generation units,
wherein the microwave plasma CVD apparatus is provided with a plurality of waveguides which is over the plurality of dielectric plates,
wherein a first gas pipe and a second gas pipe are provided to intersect with each other between the substrate and the plurality of dielectric plates,
wherein the non-source gas is released from an outlet of the first gas pipe provided on the plurality of dielectric plates side, and
wherein the source gas is released from an outlet of the second gas pipe provided on the substrate side.
12. The method for manufacturing a display device according to claim 11 , wherein the microcrystalline semiconductor film is microcrystalline silicon film.
13. The method for manufacturing a display device according to claim 11 , wherein the display device is a liquid crystal display device.
14. The method for manufacturing a display device according to claim 11 , wherein the display device is a light-emitting device.
15. The method for manufacturing a semiconductor device according to claim 1 , wherein the microcrystalline semiconductor film is formed by using the source gas including at least one of SiH 4 , Si 2 H 6 , SiCl 4 , and SiF 4 .
16. The method for manufacturing a semiconductor device according to claim 4 , wherein the microcrystalline semiconductor film is formed by using the source gas including at least one of SiH 4 , Si 2 H 6 , SiCl 4 , and SiF 4 .
17. The method for manufacturing a display device according to claim 7 , wherein the microcrystalline semiconductor film is formed by using the source gas including at least one of SiH 4 , Si 2 H 6 , SiCl 4 , and SiF 4 .
18. The method for manufacturing a display device according to claim 11 , wherein the microcrystalline semiconductor film is formed by using the source gas including at least one of SiH 4 , Si 2 H 6 , SiCl 4 , and SiF 4 .
19. The method for manufacturing a semiconductor device according to claim 1 , wherein the non-source gas is a rare gas selected from the group consisting of helium, argon, xenon, and krypton.
20. The method for manufacturing a semiconductor device according to claim 4 , wherein the non-source gas is a rare gas selected from the group consisting of helium, argon, xenon, and krypton.
21. The method for manufacturing a display device according to claim 7 , wherein the non-source gas is a rare gas selected from the group consisting of helium, argon, xenon, and krypton.
22. The method for manufacturing a display device according to claim 11 , wherein the non-source gas is a rare gas selected from the group consisting of helium, argon, xenon, and krypton.
23. The method for manufacturing a display device according to claim 7 , wherein the gate insulating film is formed by the microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz.
24. The method for manufacturing a display device according to claim 11 , wherein the gate insulating film is formed by the microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz.