Display device and manufacturing method thereof
View Patent ↗A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.
1. A manufacturing method of a display device including, in an outside region surrounding a display region comprised of an assembly of pixels, a drive unit for supplying the pixels with a drive signal and an electrode terminal for inputting a control signal from the outside to the drive unit, the method comprising:
in forming a plurality of thin film transistors of the drive unit:
forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform a generating operation of the drive signal and forming a second wiring that connects the gate electrodes of the thin film transistors adjacent to one another, to provide a series connection between the gate electrodes of adjacent thin film transistors when the second wiring is uncut, in a forming region of the drive unit, said second wiring being formed in the same layer as the first wiring; and
cutting the second wiring to disrupt the series connection of the gate electrodes of adjacent thin film transistors by the second wiring after forming the thin film transistors in the outside region of the display region.
2. The manufacturing method of the display device according to claim 1 , wherein
the second wiring is cut in forming a through hole in an insulating film formed on the electrode terminal so as to extend to the electrode.
3. The manufacturing method of the display device according to claim 1 or 2 , wherein
the thin film transistor has a bottom gate structure in which a semiconductor layer is formed above a gate electrode, and
the second wiring includes a wiring that connects the gate electrodes.
4. The manufacturing method of the display device according to claim 1 or 2 , wherein
the second wiring includes a wiring that is connected to drain electrodes or source electrodes of the thin film transistors.
5. A display device including, in an outside region surrounding a display region comprised of an assembly of pixels, a drive unit for supplying the pixels with a drive signal and an electrode terminal for inputting a control signal from the outside to the drive unit, comprising:
a first wiring that is connected to gate electrodes of the thin film transistors of the drive unit configured to cause the thin film transistors to perform a generating operation of the drive signal and a second wiring extending between gate electrodes of the thin film transistors adjacent to one another, to provide a series connection between the gate electrodes of adjacent thin film transistors when the second wiring is uncut, in the forming region of the drive unit, wherein the second wiring is formed in the same layer as the first wiring; and
a through hole that extends from an insulating film formed on the second wiring to the second wiring, wherein
the second wiring is cut by the through hole to disrupt the series connection between the gate electrodes of the adjacent thin film transistors by the second wiring.