Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement
In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.
1. A field effect transistor, comprising:
a film;
a first gate on the film;
at least a second gate on the film;
a ferroelectric material layer covering and in direct contact with at least a portion of each of the first gate, the at least a second gate, and the film between the first gate and the at least a second gate;
an insulating layer substantially covering and in direct contact with the ferroelectric material layer and portions of the film not covered by the ferroelectric material layer;
a source situated above the insulating layer;
a drain situated above the insulating layer; and
a pentacene layer situated above and over the insulating layer.
2. The field effect transistor of claim 1 , wherein the ferroelectric material layer comprises one of poly(vinylidene fluoride) (PVDF) and PVDF with trifluoroethylene (PVDF-TrFE).
3. The field effect transistor of claim 1 , wherein the ferroelectric material layer comprises a first layer of PVDF-TrFE having a first thickness and a second layer of PVDF-TrFE having a second thickness.
4. The field effect transistor of claim 3 , wherein the first and second thicknesses have different values.
5. The field effect transistor of claim 1 , wherein at least one of the first gate and the at least a second gate comprises gold.