Trench MOSFET having a top side drain
This invention discloses a trench MOSFET comprising a top side drain region in a wide trench in a termination area besides a BV sustaining area, wherein said top side drain comprises a top drain metal connected to an epitaxial layer and a substrate through a plurality of trenched drain contacts, wherein the wide trench is formed simultaneously when a plurality of gate trenches are formed in an active area, and the trenched drain contacts are formed simultaneously when a trenched source-body contact is formed in the active area.
1. A trench MOSFET having a top side drain comprising:
a substrate of a first conductivity type;
an epitaxial layer of the first conductivity type onto said substrate, wherein said epitaxial layer has a lower doping concentration than said substrate;
an active area comprising a plurality of gate trenches filled with gate material, surrounded by a body region of a second conductivity type, and flanked by a source region of the first conductivity type;
a top side drain formed in a wide trench in a termination area and comprising a top drain metal connected to said epitaxial layer through a plurality of trenched drain contacts each filled with a contact metal plug, wherein said wide trench is formed simultaneously when said gate trenches are formed in said active area;
a BV sustaining area formed in the termination area and adjacent to the top side drain.
2. The trench MOSFET of claim 1 further comprising a sinker region in said epitaxial layer underneath said wide trench, wherein said sinker region is heavily doped with the first conductivity type and reaching the interface between said epitaxial layer and said substrate.
3. The trench MOSFET of claim 1 further comprising a sinker region is said epitaxial layer underneath said wide trench, wherein said sinker region is heavily doped with the first conductivity type and not reaching the interface between said epitaxial layer and said substrate.
4. The trench MOSFET of claim 1 , wherein said By sustaining area comprising multiple trenched floating gates formed in multiple floating trenches which are formed simultaneously when said wide trench in said termination area is formed.
5. The trench MOSFET of claim 1 , wherein said BV sustaining area comprising a metal field plate atop a body dopant region in said termination area, wherein said body dopant region is of a second conductivity type.
6. The trench MOSFET of claim 1 , wherein said BV sustaining area comprising a trenched sidewall spacer close to a sidewall of said wide trench as a filed plate and connected to a source metal which is also connected to a source area and a body region in said active area.
7. The trench MOSFET of claim 4 , wherein said By sustaining area further comprising a trenched sidewall spacer close to a sidewall of said wide trench.
8. The trench MOSFET of claim 5 , wherein said BV sustaining area further comprising a trenched sidewall spacer close to a sidewall of said wide trench.
9. The trench MOSFET of claim 1 , wherein said trenched drain contacts are formed simultaneously when a trenched source-body contact is formed in said active area to connect said source region and said body region to a source metal, as well as when a trenched gate contact is formed in a gate contact area to connect the gate material in a gate contact trench to a gate metal for gate connection.
10. The trench MOSFET of claim 9 , wherein said source region in said active area is formed by lateral diffusion, having a higher doping concentration and a greater junction depth along sidewalls of said trenched source-body contact than along an adjacent channel region at a same distance from a top surface of said epitaxial layer.
11. The trench MOSFET of claim 9 , wherein said source region in said active area is formed by vertical diffusion, having a same doping concentration and a same junction depth from sidewalls of said trenched source-body contact to an adjacent channel region at a same distance from a top surface of said epitaxial layer.
12. The trench MOSFET of claim 9 , wherein said source metal, said gate metal and said top drain metal each comprising Al alloys bounded with Au, Cu or Al wire.
13. The trench MOSFET of claim 9 , wherein said source metal, said gate metal and said top drain metal each comprising Ti/Ni/Ag or Ti/Ni bounded with a solder ball for flip chip packaging.
14. The trench MOSFET of claim 1 further comprising a back drain metal comprising Ti/Ni/Ag or Ti/Ni/Au on a rear side of said substrate, wherein said back drain metal has a resistivity about 5˜10 times lower than said substrate.