Near field communication device
Near field communication (NFC) devices may be required to operate at low power and so process small signals which are more susceptible to corruption by noise. An NFC device 100 is described having an antenna 10 which can be adapted to receive signal from a further NFC device. When a signal is received by the antenna, an input voltage is generated. A variable resistance element 12 is connected in series between the antenna 10 and an amplifier 14, which is adapted to increase the input resistance with increasing input voltage. By increasing the resistance when the input voltage is increased, the current drawn from the coil is reduced. This results in a lower overall power consumption of the device while maintaining reliable performance, because the higher input signal level is less susceptible to corruption by the noise generated by the variable resistance element 12, and the amplifier 14.
1. A near field communication device comprising:
an antenna configured to receive a signal transmitted by another near field communication device and to generate an input voltage from the signal,
an amplifier,
a variable resistance element arranged in series between the antenna and an input of the amplifier, and
a controller coupled to the variable resistance element; wherein
the near field communication device is operable:
in response to an increase in the input voltage to increase the resistance of the variable resistance element, and
in response to a decrease in the input voltage to decrease the resistance of the variable resistance element.
2. A near field communication device according to claim 1 further comprising
a variable shunt resistance coupled between the input of the amplifier and a ground; wherein
the variable shunt resistance is configured to receive the input voltage from the antenna and to shunt current to the ground, and wherein
the near field communication device is further operable:
in response to an increase in the input voltage to decrease the resistance of the variable shunt resistance, and
in response to a decrease in the input voltage to increase the resistance of the variable shunt resistance.
3. A near field communication device of claim 1 , wherein the variable resistance element comprises:
a first path comprising a first resistor, and
a second path comprising a series arrangement of a switch and a second resistor; wherein
the switch is operable to couple the second path in parallel with the first path dependent on the value of the input voltage.
4. A near field communication device according to claim 3 , wherein the switch comprises a field effect transistor and the controller is coupled to a gate of the field effect transistor.
5. A near field communication device according to claim wherein the switch is an NMOS transistor having a threshold voltage, the controller is configured to generate a gate control voltage, and wherein
the NMOS transistor is configured to couple the second path in parallel with the first path when the input voltage is less than or equal to the value of the sum of the gate control voltage and the threshold voltage of the NMOS transistor.
6. A near field communication device according to claims 3 comprising a further path comprising a series arrangement of a further switch and a further resistor; wherein
the further switch is operable to couple the further path in parallel with the first path dependent on the value of the input voltage and the control input.
7. A near field communication device according to claims 3 , wherein the further switch comprises an NMOS transistor having a gate coupled to a further output of the controller comprises a digital logic gate having an output coupled to the variable resistance element.
8. A near field communication device according to claim 1 , wherein the variable shunt resistance comprises a shunt transistor having a control terminal coupled to the antenna.
9. A near field communication device according to claim 8 , wherein the shunt transistor is a field effect transistor.
10. A near field communication device according to claim 9 , wherein the shunt transistor is an NMOS field effect transistor.
11. A near field communication device according to claim 1 , wherein the antenna comprises a coil.
12. A keyless entry device comprising the near field communication device of claim 1 .
13. A transponder comprising the near field communication device of claim 1 .
14. A RFID tag comprising the near field communication device of claim 1 .
15. A hearing aid comprising the near field communication device of claim 1 .