Method of forming pattern
Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
1. A method of forming a pattern, comprising:
(a) forming a chemically amplified resist composition into a film,
(b) exposing the film to light, and
(c) developing the exposed film with a developer containing a first organic solvent subjected to a distilling operation,
wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
2. The method according to claim 1 , wherein the first organic solvent contained in the developer is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below.
3. The method according to claim 1 , which further comprises:
(d) rinsing the developed film by a rinse liquid containing a second organic solvent,
wherein in the rinse liquid, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
4. The method according to claim 3 , wherein the second organic solvent contained in the rinse liquid is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below.
5. The method according to claim 1 , wherein the exposure (b) is carried out using an ArF excimer laser.
6. The method according to claim 1 , wherein the composition comprises a resin containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and a compound that when exposed to actinic rays or radiation, generates an acid.
7. The method according to claim 6 , wherein the resin has an alicyclic hydrocarbon structure.
8. The method according to claim 6 , wherein substantially no aromatic ring is contained in the resin.
9. A method of forming a pattern, comprising:
(a) forming a chemically amplified resist composition into a film,
(b) exposing the film to light, and
(c) developing the exposed film with a developer containing a first organic solvent,
wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less, and
wherein the first organic solvent is filled in a storage container having been rinsed with the first organic solvent and dried.
10. The method according to claim 9 , wherein the first organic solvent contained in the developer is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below.
11. The method according to claim 9 , which further comprises:
(d) rinsing the developed film by a rinse liquid containing a second organic solvent,
wherein in the rinse liquid, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
12. The method according to claim 9 , wherein the second organic solvent contained in the rinse liquid is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below.
13. The method according to claim 9 , wherein the exposure (b) is carried out using an ArF excimer laser.
14. The method according to claim 9 , wherein the composition comprises a resin containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and a compound that when exposed to actinic rays or radiation, generates an acid.
15. The method according to claim 9 , wherein the resin has an alicyclic hydrocarbon structure.
16. The method according to claim 9 , wherein substantially no aromatic ring is contained in the resin.
17. A method of forming a pattern, comprising:
(a) forming a chemically amplified resist composition into a film,
(b) exposing the film to light, and
(c) developing the exposed film with a developer containing a first organic solvent that is methyl amyl ketone,
wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
18. A method of forming a pattern, comprising:
(a) forming a chemically amplified resist composition into a film,
(b) exposing the film to light, and
(c) developing the exposed film with a developer containing a first organic solvent, and
(d) rinsing the developed film by a rinse liquid containing a second organic solvent that is 4-methyl-2-pentanol,
wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.