Light emitting diode device preventing short circuiting between adjacent light emitting diode chips

Inventors: Takanori Aketa (Hirakata, JP); Youji Urano (Ikeda, JP); Tomonori Suzuki (Osaka, JP)

Assignee: Panasonic Corporation

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Quick Facts

Patent No.: US 8,664,674
App. No.: 12/733,402
Granted: Mar 4, 2014
Kind: B2

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Abstract

A light emitting device free from void-generation at a bonding between an LED chip and a metal layer provided on a dielectric substrate. This light emitting device is also free from short-circuit between the closely arranged LED chips. This light emitting device includes a plurality of the LED chips, one dielectric substrate (sub-mount member) which is made of a dielectric substrate for holding the LED chips. The dielectric substrate is formed with a plurality of supporting platforms which respectively holds the LED chips. Each supporting platform is provided with a metal layer which is soldered to the LED chip. The supporting platforms are configured to leave a groove between the adjacent ones of the supporting platforms. Each supporting platform is provided at its side surface with a solder-leading portion made of a material having a solder-wettablity higher than that of the supporting platform.

Claims (57)

1. An LED device comprising;

a plurality of LED chips;

a dielectric substrate;

a plurality of dielectric supporting platforms each formed on a top surface of said dielectric substrate for mounting thereon an LED chip of said plurality of LED chips; and

a plurality of metal layers each formed on a top surface of each of said plurality of dielectric supporting platforms, each of the plurality of metal layers being bonded to one of said plurality of LED chips through solder,

wherein said dielectric supporting platforms are configured to project from the top surface of said dielectric substrate to form a groove between adjacent dielectric supporting platforms of the plurality of dielectric supporting platforms, and

each dielectric supporting platform of the plurality of dielectric supporting platforms is provided at its side surface with a solder-leading portion formed as part of each of the metal layers, said solder-leading portion being made of a material having a higher wettablity to the solder than that of said dielectric supporting platform, wherein said metal layer and said solder-leading portion of the metal layer is made of a different material than that of said solder,

wherein said solder leading portion is directly connected to the solder and the dielectric supporting platform between the solder and the dielectric supporting platform.

2. The LED device as set forth in claim 1 , wherein

said solder-leading portion has an extension which extends on a bottom of said groove.

3. The LED device as set forth in claim 2 , wherein

said solder-leading portion is made of the same material as that of said metal layer, wherein

each extending length of said extension is shorter than half of the interval between adjacent dielectric supporting platforms of the plurality of dielectric supporting platforms.

4. The LED device as set forth in claim 1 , wherein

said groove is provided at its bottom with a dielectric barrier which protrudes between said supporting platforms so as to prevent a short-circuit between adjacent solder-leading portions.

5. The LED device as set forth in claim 3 , wherein

said groove is provided at its bottom with a dielectric barrier which protrudes between said supporting platforms so as to prevent a short-circuit between adjacent solder-leading portions.

6. The LED device as set forth in claim 4 , wherein

said barrier is configured to have a top lower than that of said supporting platform.

7. The LED device as set forth in claim 5 , wherein

said barrier is configured to have a top lower than that of said supporting platform.

8. The LED device as set forth in claim 4 , wherein

said barrier is formed integrally with said dielectric substrate.

9. The LED device as set forth in claim 5 , wherein

said barrier is formed integrally with said dielectric substrate.

10. The LED device as set forth in claim 6 , wherein

said barrier is formed integrally with said dielectric substrate.

11. The LED device as set forth in claim 7 , wherein

said barrier is formed integrally with said dielectric substrate.

12. The LED device as set forth in claim 1 , wherein