Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
1. A method for optical proximity correction (OPC) comprising:
inputting an input pattern; and
determining a plurality of shaped beam shots that can form a pattern on a surface, wherein the surface pattern is an OPC-compensated version of the input pattern, and wherein the determining uses particle beam simulation.
2. The method of claim 1 wherein the particle beam simulation includes at least one of a group consisting of forward scattering, backward scattering, resist diffusion, Coulomb effect, etching, fogging, loading and resist charging.
3. The method of claim 1 wherein at least two shots in the plurality of shaped beam shots overlap.
4. The method of claim 1 further comprising calculating a calculated pattern on the surface from the plurality of shaped beam shots.
5. The method of claim 1 wherein the plurality of shaped beam shots can form a curvilinear pattern on the surface.
6. The method of claim 1 wherein each shaped beam shot in the plurality of shaped beam shots comprises an assigned dose, and wherein the doses of the shaped beam shots vary with respect to each other before proximity effect correction.
7. The method of claim 1 wherein the determining comprises using an optimization technique to determine the plurality of shaped beam shots.
8. The method of claim 7 wherein the plurality of shaped beam shots is reduced in number.
9. The method of claim 1 , further comprising:
inputting possible glyphs, each of the possible glyphs being determined using a calculation of at least one shaped beam shot;
wherein the determining comprises using glyphs in the set of possible glyphs to determine a fraction of the plurality of shaped beam shots; and
wherein the fraction is less than unity.
10. A system for optical proximity correction (OPC) comprising:
a device configured to input an input pattern;
a set of OPC instructions; and
a computation device configured to determine a plurality of shaped beam shots that can form a pattern on a surface;
wherein the pattern is an OPC-compensated version of the input pattern; and
wherein the computation device uses particle beam simulation.
11. The system of claim 10 wherein at least two shots in the plurality of shaped beam shots overlap.
12. The system of claim 10 wherein the particle beam simulation includes at least one of a group consisting of forward scattering, backward scattering, resist diffusion, Coulomb effect, etching, fogging, loading and resist charging.
13. The system of claim 10 wherein each shaped beam shot in the plurality of shots comprises an assigned dose, and wherein the doses of the shaped beam shots vary with respect to each other before proximity effect correction.
14. The system of claim 10 wherein the computation device uses an optimization technique to determine the plurality of shaped beam shots.
15. The system of claim 14 wherein the plurality of shaped beam shots is reduced in number.
16. The system of claim 10 wherein the computation device comprises a plurality of general-purpose processor cores together with a special-purpose hardware device.
17. A computer readable medium storing a computer program comprising instructions which, when executed by a processing system, cause the system to perform a method for optical proximity correction (OPC), the method comprising:
inputting an input pattern;
inputting a set of OPC instructions; and
determining a plurality of shaped beam shots that can form a pattern on a surface, wherein the pattern is an OPC-compensated version of the input pattern, and wherein the determining uses particle beam simulation.
18. The method of claim 17 wherein the particle beam simulation includes at least one of a group consisting of forward scattering, backward scattering, resist diffusion, Coulomb effect, etching, fogging, loading and resist charging.
19. The method of claim 17 wherein each shaped beam shot in the plurality of shots comprises an assigned dose, and wherein the doses of the shaped beam shots vary with respect to each other before proximity effect correction.
20. The method of claim 17 wherein the determining comprises using an optimization technique to determine the plurality of shaped beam shots.