Thin film transistor, display device and liquid crystal display device
A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
1. A thin film transistor comprising:
a gate electrode film onto which light from a light source is irradiated;
a semiconductor film formed on an opposite side of the gate electrode film to the light source side, through an insulating film;
first and second electrode films formed to be in electrical contact with the semiconductor film; and
a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film,
wherein the first shielding film overlaps a part of the semiconductor film as seen from a light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction, and
wherein a region of a first gap between the first shielding film and the gate electrode film does not overlap the first electrode film as seen from the light irradiation direction.
2. The thin film transistor according to claim 1 , wherein the first electrode film is arranged to be spaced apart from the gate electrode film as seen from the light irradiation direction.
3. The thin film transistor according to claim 1 , wherein at least a part of the first electrode film includes a contact surface area that is in electrical contact with the semiconductor film.
4. The thin film transistor according to claim 1 , wherein the first electrode film and the first shielding film are in electrical contact with each other.
5. The thin film transistor according to claim 1 , further comprising:
a second shielding film formed in the same layer as the gate electrode film and electrically isolated from the gate electrode film,
wherein the second shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the second electrode film as seen from the light irradiation direction.
6. A display device having a thin film transistor described in claim 1 .
7. The thin film transistor according to claim 2 , wherein a second gap between the first electrode film and the gate electrode film as seen from the light irradiation direction is larger than the first gap between the first shielding film and the gate electrode film.
8. The thin film transistor according to claim 4 , wherein the first electrode film is directly connected to the first shielding film.
9. The thin film transistor according to claim 5 ,
wherein a pixel electrode is electrically connected to the first electrode film, and a common electrode is opposed to the pixel electrode, and
wherein the first shielding film overlaps a part of the common electrode, and the second shielding film overlaps the common electrode.
10. The thin film transistor according to claim 1 , wherein the semiconductor film is formed of amorphous silicon.
11. The thin film transistor according to claim 1 , wherein the semiconductor film is formed of microcrystalline silicon.
12. A liquid crystal display device comprising a liquid crystal panel, a backlight, and a thin film transistor formed on the liquid crystal panel, the thin film transistor comprising:
a gate electrode film onto which light from the back light is irradiated;
a semiconductor film formed on an opposite side of the gate electrode film to the light source side, through an insulating film;
first and second electrode films formed to be in electrical contact with the semiconductor film; and
a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film,
wherein the first shielding film overlaps a part of the semiconductor film as seen from a light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction, and
wherein a region of a first gap between the first shielding film and the gate electrode film does not overlap the first electrode film as seen from the light irradiation direction.
13. The liquid crystal display device according to claim 12 , wherein the first electrode film is arranged to be spaced apart from the gate electrode film as seen from the light irradiation direction.
14. The liquid crystal display device according to claim 12 , wherein at least a part of the first electrode film includes a contact surface area that is in electrical contact with the semiconductor film.
15. The liquid crystal display device according to claim 12 , wherein the first electrode film and the first shielding film are in electrical contact with each other.
16. The liquid crystal display device according to claim 12 , further comprising:
a second shielding film formed in the same layer as the gate electrode film and electrically isolated from the gate electrode film,
wherein the second shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the second electrode film as seen from the light irradiation direction.