Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same
One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg 1 n -Rg 3 n of a near-I/O FET Qn 1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg 3 n and Rg 4 n of middle-portion FETs Qn 3 and Qn 4 . Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg 1 n -Rg 3 n , and middle-portion gate resistances Rg 3 n and Rg 4 n , the distortion of current flowing through the near-I/O gate resistances Rg 1 n -Rg 3 n near to the input/output terminal I/O can be reduced.
1. A semiconductor IC, comprising:
an input/output terminal connectable to a transmit/receive antenna;
at least one receive signal output terminal; and
at least one transmit signal input terminal,
wherein a high-frequency switch for reception is connected between the input/output terminal and the receive signal output terminal,
wherein a transmit high-frequency switch is connected between the input/output terminal and the transmit signal input terminal,
wherein a receive control voltage is supplied to a receive control input terminal of the high-frequency switch for reception,
wherein the high-frequency switch for reception includes a field effect transistor for reception,
wherein the receive control voltage of High level is supplied to a gate of the field effect transistor for reception serving as the control input terminal for reception of the high-frequency switch for reception, whereby the field effect transistor for reception is brought into conduction, and a receive high-frequency input signal supplied to the input/output terminal from the transmit/receive antenna is passed to the receive signal output terminal,
wherein the high-frequency switch for transmission includes a field effect transistor for transmission and a DC boost circuit,
wherein the DC boost circuit includes a high-frequency input terminal, a DC control input terminal and a DC output terminal,
wherein a transmit high-frequency output signal is supplied to the high-frequency input terminal of the DC boost circuit, and a DC control voltage is supplied to the DC control input terminal, whereby a DC output voltage arises from the DC output terminal,
wherein the transmit high-frequency output signal is supplied to a signal input terminal for transmission of the high-frequency switch for transmission,
wherein a signal output terminal for transmission of the high-frequency switch for transmission is connected with the input/output terminal,
wherein the DC output voltage of High level from the DC output terminal of the DC boost circuit is supplied to a gate of the field effect transistor for transmission serving as a control input terminal for transmission of the high-frequency switch for transmission, whereby the field effect transistor for transmission is thereby brought into conduction, and the transmit high-frequency output signal supplied to the signal input terminal for transmission of the high-frequency switch for transmission is passed to the input/output terminal,
wherein the DC boost circuit includes a first capacitance element, a second capacitance element, a first diode, a second diode, a first resistance element and a second resistance element,
wherein the high-frequency input terminal is connected with one terminal of a series of the first capacitance and resistance elements connected in series,
wherein the other terminal of the series of the first capacitance and resistance elements is connected with a cathode of the first diode and an anode of the second diode,
wherein an anode of the first diode, and one terminal of the second capacitance element are connected with the DC control input terminal, and a cathode of the second diode and the other terminal of the second capacitance element are connected with one terminal of the second resistance element,
wherein the other terminal of the second resistance element is connected with the DC output terminal, and
wherein the first resistance element is set larger in resistance value than a first series resistance of the first diode and a second series resistance of the second diode in a closed loop including the first and second diodes and second capacitance element.
2. The semiconductor IC according to claim 1 ,
wherein each of the field effect transistors serving as high-frequency switches of the high-frequency switch for reception and the high-frequency switch for transmission consists of a plurality of field effect transistors with drain-source paths thereof connected in series.
3. The semiconductor IC according to claim 2 ,
wherein the field effect transistor serving as the high-frequency switch is composed of a heterojunction HEMT formed in a compound semiconductor chip.
4. A high-frequency module comprising:
a power amplifier operable to amplify a high-frequency transmit signal produced by a high-frequency analog signal processing semiconductor IC and then supply the signal to an antenna; and
an antenna switch semiconductor IC for supplying a high-frequency receive signal received through the antenna to a high-frequency analog signal processing semiconductor It, and supplying an output signal of the power amplifier to the antenna,
wherein the semiconductor IC according to claim 1 is used as the antenna switch semiconductor IC.