Method of manufacturing graphene by using germanium layer
A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
1. A method of manufacturing graphene, the method comprising:
forming a germanium layer on a surface of a substrate; and
forming the graphene directly on the germanium layer using a chemical vapor deposit method by supplying carbon-containing gas into a chamber in which the substrate is disposed.
2. The method of claim 1 , wherein the substrate includes one material selected from the group consisting of silicon, silicon oxide, quartz, glass, plastic, sapphire and a combination thereof.
3. The method of claim 1 , wherein the graphene includes one to three graphene layers.
4. The method of claim 1 , wherein the germanium layer is a single crystalline or polycrystalline germanium layer.
5. The method of claim 4 , wherein the germanium layer has a thickness of about 100 nanometers to about 10 micrometers, in a direction perpendicular to the surface of the substrate.
6. A method of manufacturing graphene, the method comprising:
supplying carbon-containing gas into a chamber in which a germanium substrate is disposed; and
forming the graphene directly on the germanium substrate using a chemical vapor deposit method.
7. The method of claim 6 , wherein the graphene includes one to three graphene layers.
8. The method of claim 6 , wherein the germanium substrate is a single crystalline substrate.
9. The method of claim 1 , wherein no catalyst metal layer is used in the forming the graphene.
10. A method of manufacturing graphene, the method comprising:
forming a germanium layer directly on an upper surface of a substrate;
disposing the substrate including the germanium layer into a chamber;
supplying carbon-containing gas into the chamber in which the substrate and the germanium layer are disposed, to form the graphene directly on an upper surface of the germanium layer using a chemical vapor deposit method;
disposing a support member on an upper surface of the formed graphene; and
removing the germanium layer while the support member is on the upper surface of the formed graphene, to separate the formed graphene from the substrate.