Magnetoresistive element and magnetic memory
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn x Ga 100-x (45≦x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including Mn y Ga 100-y (45≦y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.
1. A magnetoresistive element comprising:
a base layer;
a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn x Ga 100 - x (45 x <64 atomic %);
a first nonmagnetic layer formed on the first magnetic layer; and
a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including Mn y Ga 100-y (45 y <64 atomic %),
the first and second magnetic layers comprising different Mn composition rates from each other, the first magnetic layer having a smaller Mn concentration than the second magnetic layer, a magnetization direction of the first magnetic layer being changeable and a magnetization direction of the second magnetic layer being unchangeable.
2. The magnetoresistive element according to claim 1 , wherein the first nonmagnetic layer is an oxide that contains one element selected from the group consisting of Mg, Ca, Al, Sr, and Ti.
3. The magnetoresistive element according to claim 1 , wherein an interfacial layer containing Al and Mn is formed between the first magnetic layer and the first nonmagnetic layer, and/or between the second magnetic layer and the first nonmagnetic layer.
4. The magnetoresistive element according to claim 1 , wherein the base layer includes a nitride layer that has a (001) oriented NaCl structure, the nitride layer containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce.
5. The magnetoresistive element according to claim 1 , wherein the base layer includes a (001) oriented perovskite oxide that is made of ABO 3 , the A-site containing at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, the B-site containing at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb.
6. The magnetoresistive element according to claim 1 , wherein the base layer includes an oxide layer that has a (001) oriented NaCl structure, the oxide layer containing at least one element selected from the group consisting of Mg, Al, and Ce.
7. The magnetoresistive element according to claim 1 , wherein the base layer comprises one of a tetragonal structure and a cubic structure, is (001) oriented, and contains at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au.
8. The magnetoresistive element according to claim 1 , wherein
the base layer includes a first layer and a second layer formed on the first layer,
the first layer includes at least one of:
a nitride layer that has a (001) oriented NaCl structure, and contains at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce;
a (001) oriented perovskite oxide layer that is made of ABO 3 , the A-site containing at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, the B-site containing at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb; and
an oxide layer that has a (001) oriented NaCl structure, and contains at least one element selected from the group consisting of Mg, Al, and Ce, and
the second layer has one of a tetragonal structure and a cubic structure, is (001) oriented, and contains at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au.
9. The magnetoresistive element according to claim 1 , wherein
the second magnetic layer has a fixed magnetization direction,
the magnetoresistive element further comprises: a third magnetic layer formed on the opposite side of the second magnetic layer from the first nonmagnetic layer, having an axis of easy magnetization in a direction perpendicular to a film plane, and having a magnetization direction antiparallel to the magnetization direction of the second magnetic layer; and a second nonmagnetic layer formed between the second ferromagnetic layer and the third ferromagnetic layer,
wherein M S2 represents a saturation magnetization of the second magnetic layer, t 2 represents a film thickness of the second magnetic layer, M s3 represents a saturation magnetization of the third magnetic layer, and t 3 represents a film thickness of the third magnetic layer, and the following relationship is satisfied
M S2 ×t 2 <M S3 ×t 3 .
10. A magnetic memory comprising:
the magnetoresistive element according to claim 1 ;
a first interconnect that is electrically connected to the first magnetic layer of the magnetoresistive element; and
a second interconnect that is electrically connected to the second magnetic layer of the magnetoresistive element.
11. A magnetoresistive element comprising:
a base layer; and
a stacked structure formed on the base layer, the stacked structure including: a first magnetic layer including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn x Ga 100 - x (45 x <64 atomic %); a second magnetic layer including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed between the first magnetic layer and the second magnetic layer, and containing at least one element selected from the group consisting of Mg, Ca, Ba, Al, Ag, Cu, Be, Sr, Zn, and Ti; and an interfacial layer formed between the first magnetic layer and the first nonmagnetic layer, the interfacial layer containing Al and Mn,
a magnetization direction of the first magnetic layer being changeable.
12. The magnetoresistive element according to claim 11 , further comprising
an interfacial layer formed between the second magnetic layer and the first nonmagnetic layer, and containing at least one element selected from the group consisting of Cr, Co, Fe, Ni, B, C, P, Ta, Ti, Mo, Al, Si, W, Nb, Mn, and Ge.
13. The magnetoresistive element according to claim 11 , wherein the base layer includes a nitride layer that has a (001) oriented NaCl structure, the nitride layer containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce.
14. The magnetoresistive element according to claim 11 , wherein the base layer includes a (001) oriented perovskite oxide that is made of ABO 3 , the A-site containing at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, the B-site containing at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb.
15. The magnetoresistive element according to claim 11 , wherein the base layer includes an oxide layer that has a (001) oriented NaCl structure, the oxide layer containing at least one element selected from the group consisting of Mg, Al, and Ce.
16. The magnetoresistive element according to claim 11 , wherein the base layer comprises one of a tetragonal structure and a cubic structure, is (001) oriented, and contains at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au.
17. The magnetoresistive element according to claim 11 , wherein
the base layer includes a first layer and a second layer formed on the first layer,
the first layer includes at least one of:
a nitride layer that has a (001) oriented NaCl structure, and contains at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce;
a (001) oriented perovskite oxide layer that is made of ABO 3 , the A-site containing at least one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, the B-site containing at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb; and
an oxide layer that has a (001) oriented NaCl structure, and contains at least one element selected from the group consisting of Mg, Al, and Ce, and
the second layer has one of a tetragonal structure and a cubic structure, is (001) oriented, and contains at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au.
18. The magnetoresistive element according to claim 11 , wherein
the second magnetic layer has a fixed magnetization direction,
the magnetoresistive element further comprises: a third magnetic layer formed on the opposite side of the second magnetic layer from the first nonmagnetic layer, having an axis of easy magnetization in a direction perpendicular to a film plane, and having a magnetization direction antiparallel to the magnetization direction of the second magnetic layer; and a second nonmagnetic layer formed between the second ferromagnetic layer and the third ferromagnetic layer,
wherein M S2 represents a saturation magnetization of the second magnetic layer, t 2 represents a film thickness of the second magnetic layer, M s3 represents a saturation magnetization of the third magnetic layer, and t 3 represents a film thickness of the third magnetic layer, and the following relationship is satisfied
M S2 ×t 2 <M S3 ×t 3 .
19. A magnetic memory comprising:
the magnetoresistive element according to claim 11 ;
a first interconnect that is electrically connected to the first magnetic layer of the magnetoresistive element; and
a second interconnect that is electrically connected to the second magnetic layer of the magnetoresistive element.