Atomic layer deposition of chemical passivation layers and high performance anti-reflection coatings on back-illuminated detectors
A back-illuminated silicon photodetector has a layer of Al 2 O 3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al 2 O 3 layer has an antireflection coating deposited thereon. The Al 2 O 3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al 2 O 3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al 2 O 3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.
1. A silicon photodetector, comprising:
a silicon die having at least one photodetector element configured to detect electromagnetic radiation in a wavelength of interest, said silicon die having a silicon surface configured to receive said electromagnetic radiation, and having at least one terminal configured to provide an electrical signal representative of a property of said electromagnetic radiation, said silicon die having a doped layer situated within 5 nanometers of said surface, said silicon die having a silicon oxide layer with a first oxide surface adjacent said silicon surface and a second oxide surface on a side opposite said first oxide surface;
a buffer layer comprising a chemically-resistant material having a first buffer layer surface adjacent said second surface of said silicon oxide layer, said buffer layer of said chemically-resistant material having a thickness configured to render said buffer layer of chemically-resistant material optically innocuous at said wavelength of interest, and having a second buffer layer surface on a side opposite said first buffer layer surface; and
an antireflection layer configured to be transparent to electromagnetic radiation in said wavelength of interest, said antireflection layer having a first antireflection layer surface adjacent said second buffer layer surface;
said buffer layer configured to prevent said electromagnetic radiation in said wavelength of interest from causing a chemical reaction of said silicon oxide layer with said antireflection layer.
2. The silicon photodetector of claim 1 , wherein said doped layer situated within 5 nanometers of said surface is a delta-doped layer.
3. The silicon photodetector of claim 1 , wherein said doped layer situated within 5 nanometers of said surface is a doped layer fabricated using MBE technology.
4. The silicon photodetector of claim 1 , wherein said doped layer situated within 5 nanometers of said surface is a doped layer fabricated using ion implantation.
5. The silicon photodetector of claim 1 , wherein said doped layer situated within 5 nanometers of said surface is a doped layer fabricated using chemical vapor deposition.
6. The silicon photodetector of claim 1 , wherein said buffer layer comprising a chemically-resistant material is Al 2 O 3 .
7. The silicon photodetector of claim 6 , wherein said Al 2 O 3 buffer layer has a thickness in the range of 1 nm to 23 nm.
8. The silicon photodetector of claim 1 , wherein said antireflection layer comprises at least one material selected from the group of materials consisting of HfO 2 , MgF 2 , Al 2 O 3 , SiO 2 , LiF, Si 3 N 4 , and MgO.
9. The silicon photodetector of claim 1 , wherein said electromagnetic radiation in a wavelength of interest is electromagnetic radiation in the wavelength range of 100 nm to 300 nm.
10. A method of providing an antireflection layer on a silicon photodetector, comprising the steps of:
providing an silicon photodetector comprising a silicon die having at least one photodetector element configured to detect electromagnetic radiation in a wavelength of interest, and having at least one terminal configured to provide an electrical signal representative of a property of said electromagnetic radiation;
producing on said silicon die a doped layer with an overcoat of silicon configured to situate said doped layer within 5 nanometers of a silicon surface;
creating a silicon oxide layer with a first oxide surface adjacent said silicon surface and a second oxide surface on a side opposite said first oxide surface;
depositing on said second oxide surface of said silicon oxide layer a buffer layer comprising a chemically-resistant material having a first buffer layer surface adjacent said second surface of said silicon oxide layer, said buffer layer of said chemically-resistant material having a thickness configured to render said buffer layer of chemically-resistant material optically innocuous at said wavelength of interest, and having a second buffer layer surface on a side opposite said first buffer layer surface; and
depositing on said second buffer layer surface an antireflection layer configured to be transparent to electromagnetic radiation in said wavelength of interest, said antireflection layer having a first antireflection layer surface adjacent said second buffer layer surface;
whereby said buffer layer is configured to prevent said electromagnetic radiation in said wavelength of interest from causing a chemical reaction of said silicon oxide layer with said antireflection layer.
11. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said doped layer situated within 5 nanometers of said surface is a delta-doped layer.
12. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said doped layer situated within 5 nanometers of said surface is a doped layer fabricated using MBE technology.
13. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said doped layer situated within 5 nanometers of said surface is a doped layer fabricated using ion implantation.
14. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said doped layer situated within 5 nanometers of said surface is a doped layer fabricated using chemical vapor deposition.
15. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said a buffer layer comprising a chemically-resistant material is a buffer layer of Al 2 O 3 .
16. The method of providing an antireflection layer on a silicon photodetector of claim 15 , wherein said buffer layer of Al 2 O 3 has a thickness in the range of 1 nm to 23 nm.
17. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said buffer layer of Al 2 O 3 is deposited using atomic layer deposition.
18. The method of providing an antireflection layer on a silicon photodetector of claim 10 , wherein said antireflection layer comprises at least one material selected from the group of materials consisting of Hf 0 2 , MgF 2 , Al 2 O 3 , SiO 2 , LiF, Si 3 N 4 , and MgO.
19. A silicon photodetector, comprising:
a silicon die having at least one photodetector element configured to detect electromagnetic radiation in a wavelength of interest, said silicon die having a silicon surface configured to receive said electromagnetic radiation, and having at least one terminal configured to provide an electrical signal representative of a property of said electromagnetic radiation, said silicon die having a doped layer situated within 5 nanometers of said surface, said silicon die having a silicon oxide layer with a first oxide surface adjacent said silicon surface and a second oxide surface on a side opposite said first oxide surface; and
a chemical passivation layer comprising a chemically-resistant material having a first chemical passivation layer surface adjacent the second surface of the silicon oxide layer, and having a second chemical passivation layer surface on a side opposite the first chemical passivation layer surface, the chemical passivation layer configured to be transparent to electromagnetic radiation in the wavelength of interest, the chemical passivation layer configured to prevent the electromagnetic radiation in the wavelength of interest from causing a chemical reaction of the silicon oxide layer.