Semiconductor storage device

1. A semiconductor storage device comprising:

a semiconductor substrate;

a plurality of memory cells on an upper portion of or above the semiconductor substrate, the memory cells including storage elements storing therein data and switching elements;

a plurality of active areas, on which the switching elements of the memory cells are respectively formed, isolated from one another to correspond to the memory cells, respectively, and arranged on the semiconductor substrate in a first direction, the active areas adjacent in a second direction substantially orthogonal to the first direction being arranged to be half-pitch-staggered in the first direction; and

a plurality of upper electrodes each connecting one end of the storage element of a first memory cell to the switching element of a second memory cell adjacent to the first memory cell in the second direction and to a bit line, the first and second memory cells being among the plurality of memory cells.

2. The device of claim 1 , wherein

the active areas respectively have a shape extending in the first direction,

the upper electrodes respectively have a shape extending in the second direction, and

the active areas and the upper electrodes are arranged to appear to be of a continuous rectangular wave shape or a continuous staircase shape as viewed from above a surface of the semiconductor substrate.

3. The device of claim 2 , wherein

the upper electrodes respectively have a shape extending in the second direction, and

ends of the two upper electrodes adjacent to each other in the first direction are uniformly arranged in the second direction.

4. The device of claim 2 , wherein

the upper electrodes respectively have a shape extending in the second direction, and

two upper electrodes adjacent to each other in the first direction among the plurality of upper electrodes are arranged to be half-pitch-staggered in the second direction.

5. A semiconductor storage device comprising:

a plurality of bit lines;

a plurality of word lines; and

a plurality of memory cells each including a storage element and a switching element which are connected in series between adjacently paired ones of the bit lines, each gate node of the switching elements of the memory cells connected between one of the adjacently paired ones of the bit lines being respectively connected to different ones of the word lines, wherein

a plurality of the storage elements and a plurality of the switching elements of the adjacent memory cells are alternately connected in series.

6. The device of claim 5 , wherein

the storage element of a first memory cell among the plurality of memory cells is connected to the switching element of a second memory cell adjacent to the first memory cell, and

the storage element of the second memory cell is connected to the switching element of a third memory cell further adjacent to the second memory cell.

7. The device of claim 6 , wherein the first, second, and third memory cells are connected between a same pair of the bit lines.

8. The device of claim 7 , wherein data is read from or written to the first, second, or third memory cell via the same pair of the bit lines which is connected to the first, second, and third memory cells, when the data is read from or written to the first, second, or third memory cell.

9. The device of claim 6 , wherein

the first memory cell is connected between a first bit line and a second bit line adjacent to the first bit line, the first and second bit lines being among the plurality of bit lines,

the second memory cell is connected between the second bit line and a third bit line adjacent to the second bit line, the third bit line being among the plurality of bit lines, and

the third memory cell is connected between the third bit line and a fourth bit line adjacent to the third bit line, the fourth bit line being among the plurality of bit lines.

10. The device of claim 9 , wherein

data is read from or written to the first memory cell via a pair of the first and second bit lines, when the data is read from or written to the first memory cell,

data is read from or written to the second memory cell via a pair of the second and third bit lines, when the data is read from or written to the second memory cell, and

data is read from or written to the third memory cell via a pair of the third and fourth bit lines, when the data is read from or written to the third memory cell.

11. The device of claim 1 , wherein the storage element is a magnetic tunnel junction element.

12. The device of claim 5 , wherein the storage element is a magnetic tunnel junction element.

13. The device of claim 1 , wherein

the storage element is connected to one end of the switching element, and

the device further comprises:

a lower contact connected to the other end of the switching element; and

an upper contact provided above the lower contact via one of the upper electrodes.

14. The device of claim 1 , wherein

the storage element is connected to one end of the switching element, and

the device further comprises:

a lower contact connected to the other end of the switching element; and

an upper contact provided above the storage element via one of the upper electrodes.

15. The device of claim 1 , wherein the switching element is a transistor.

16. The device of claim 5 , wherein the switching element is a transistor.