Sensing apparatus and method
A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localized fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localized fluctuations of ionic charge indicating events occurring during a chemical reaction.
1. A method of observing a nucleic acid reaction comprising detecting an electrical signal output from an ion sensitive field effect transistor exposed to said reaction, characterised by monitoring the detected electrical signal to discriminate fluctuations in the electrical signal to identify the insertion of one or more nucleotides at the end of a nucleotide chain.
2. A method as claimed in claim 1 further comprising: providing a mixture of an unknown nucleic acid and a polymerase, inserting a known nucleotide base for nucleic acid synthesis, and associating the fluctuations with the insertion of the known nucleotide base to the synthesized nucleic acid to identify one or more bases of the unknown nucleic acid.
3. A method as claimed in claim 1 , wherein the insertion of a di-deoxynucleotide triphosphate (ddNTP) at the end of a nucleotide chain is detected.
4. A method according to claim 1 , wherein DNA synthesis is observed and fluctuations in the electrical signal indicate the insertion of one or more deoxynucleotide triphosphates (dNTPs) and termination of DNA synthesis by insertion of a di-deoxynucleotide triphosphate (ddNTP).
5. A method according to claim 4 , wherein the time at which the fluctuations occur and the magnitude of the fluctuations are monitored to allow sequencing of DNA or mRNA.
6. A method according to claim 4 , wherein the method includes thermocycling.
7. A method according to claim 1 further comprising repeating the reaction and the detecting and monitoring steps multiple times to improve signal to noise ratios of the detected electrical signals.
8. A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to a nucleic acid reaction to which the transistor is exposable, characterised by further comprising
means for monitoring the electrical output signal to discriminate fluctuations in the electrical output signal, said fluctuations identifying the insertion of one or more nucleotides at the end of a nucleotide chain.
9. A sensing apparatus according to claim 8 , wherein the ion sensitive field effect transistor is provided with a layer of silicon nitride.
10. A sensing apparatus according to claim 8 , wherein the ion sensitive field effect transistor is provided with an enzyme linked layer.
11. A sensing apparatus according to claim 10 , wherein the enzyme linked layer is provided over the layer of silicon nitride.
12. A sensing apparatus according to claim 11 , wherein the enzyme linked layer comprises polymerase.
13. A sensing apparatus according to claim 8 , wherein the ion sensitive field effect transistor is provided as part of an integrated circuit which is substantially covered by epoxy resin, and the field effect transistor is not covered by the epoxy resin.
14. A sensing apparatus according to claim 8 , wherein the ISFET is exposable to an unknown nucleic acid, a polymerase and a known nucleotide base; and the apparatus further comprises means adapted for associating the fluctuations in the electrical output signal with an insertion of a known nucleotide base for nucleic acid synthesis to identify one or more bases of the unknown nucleic acid.
15. A sensing apparatus according to claim 14 further comprising monitoring means arranged to monitor the time at which the fluctuations occur and the magnitude of the localised fluctuations, to allow sequencing of DNA or mRNA.
16. A sensing apparatus according to claim 14 , wherein the ion sensitive field effect transistor is configured to generate the electrical output signal in response to a pyrophosphate hydrolysis reaction.
17. A sensing apparatus according to claim 16 further comprising a reagent mixture which has a pH of less than 7, in which the ion sensitive field effect transistor is located.
18. A sensing apparatus according to claim 17 further comprising a reagent mixture which has a pH of 6.8, in which the ion sensitive field effect transistor is located.
19. A sensing apparatus according to claim 17 , wherein the reagent mixture includes magnesium.
20. A sensing apparatus according to claim 8 , wherein the apparatus includes at least one PMOS transistor arranged to operate in the weak inversion region.
21. A sensing apparatus according to claim 8 , wherein the apparatus includes at least one NMOS transistor arranged to operate in the weak inversion region.
22. A sensing apparatus according to claim 8 , wherein the apparatus is configured to generate an electrical output signal in response to ion consumption or ion liberation.