Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby
A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.
1. A method of forming an optoelectronic device comprising:
providing a deposition surface;
contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid over one or more cycles to form an initial QD film on the deposition surface; and
contacting the initial QD film with a secondary treatment chemical, wherein the secondary treatment chemical is at least one of hydrazine, formic acid, mercaptopropionic acid, an organic acid, ethanol and ethylenediamine.
2. The method of forming an optoelectronic device of claim 1 wherein the step of contacting the initial QD film with the secondary treatment chemical comprises contacting the initial QD film with the secondary treatment chemical and contacting the deposition surface with the quantum dot (QD) colloid over one or more cycles to deposit additional QD colloids on the initial QD film.
3. The method of forming an optoelectronic device of claim 2 wherein the initial QD film is formed to a thickness of about 40 nm to 400 nm.
4. The method of forming an optoelectronic device of claim 2 wherein the initial QD film is thickened by about 1 nm to 50 nm by the deposition of additional QD colloids in the secondary treatment chemical.
5. The method of forming an optoelectronic device of claim 1 wherein the step of contacting the initial QD film with the secondary treatment chemical comprises contacting the initial QD film with the secondary treatment chemical over one or more cycles without depositing additional QD colloids on the initial QD film.
6. A method of forming a solar cell comprising:
providing a substrate;
forming a first electrode in contact with the substrate;
contacting the first electrode with a ligand exchange chemical and contacting the first electrode with a quantum dot (QD) colloid over one or more cycles to form an initial QD film in contact with the first electrode;
contacting the initial QD film with a secondary treatment chemical, wherein the secondary treatment chemical is at least one of hydrazine, formic acid, mercaptopropionic acid, an organic acid, ethanol and ethylenediamine; and
forming a second electrode in contact with the initial QD film, not in contact with the first electrode.
7. The method of forming a solar cell of claim 6 wherein the step of contacting the initial QD film with the secondary treatment chemical comprises contacting the initial QD film with the secondary treatment chemical and contacting the deposition surface with a quantum dot (QD) colloid over one or more cycles to deposit additional QD colloids on the initial QD film.
8. The method of forming a solar cell of claim 7 wherein the initial QD film is formed to a thickness of about 40 nm to 400 nm.
9. The method of forming a solar cell of claim 7 wherein the initial QD film is thickened by about 1 nm to 50 nm by the deposition of additional QD colloids in the secondary treatment chemical.
10. The method of forming a solar cell of claim 6 wherein the step of contacting the initial QD film with the secondary treatment chemical comprises contacting the initial QD film with the secondary treatment chemical over one or more cycles without depositing additional QD colloids on the initial QD film.
11. The method of forming a solar cell of claim 6 further comprising forming a doped window layer in contact with the first electrode and the initial QD film.