Manufacturing method of semiconductor device
View Patent ↗One object is to have stable electrical characteristics and high reliability and to manufacture a semiconductor device including a semi-conductive oxide film. Film formation is performed by a sputtering method using a target in which gallium oxide is added to a material that is easy to volatilize compared to gallium when the material is heated at 400° C. to 700° C. like zinc, and a formed film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film and the oxide is crystallized. Further, a semi-conductive oxide film is deposited thereover, whereby a semi-conductive oxide having a crystal which succeeds a crystal structure of the oxide that is crystallized by heat treatment is formed.
1. A manufacturing method of a semiconductor device, comprising the steps of:
forming a first film that contains an oxide including at least a first metal element and a second metal element, over a substrate;
heating the first film to form a first layer that contains a crystal of an oxide including the first metal element as a main metal component and a second layer that is on a side closer to the substrate than the first layer and contains an oxide including the second metal element as a main metal component;
forming a second film that is in contact with the first layer and contains an oxide; and
heating the first layer and the second film.
2. The manufacturing method of a semiconductor device, according to claim 1 , wherein the second film is a semi-conductive oxide film.
3. The manufacturing method of a semiconductor device, according to claim 1 , wherein a ratio of the second metal element to a metal element in the second film is greater than or equal to 0.2.
4. The manufacturing method of a semiconductor device, according to claim 1 , wherein the first film is formed by a DC sputtering method.
5. A manufacturing method of a semiconductor device, comprising the steps of:
forming a first film that contains an oxide including at least a first metal element and a second metal element, over a substrate;
heating the first film to form a first layer that contains a crystal of an oxide including the first metal element as a main metal component and a second layer that is on a side closer to the substrate than the first layer and contains an oxide including the second metal element as a main metal component;
forming a second film that is in contact with the first layer and contains an oxide; and
forming a third film from the first layer and the second film by heating the first layer and the second film.
6. The manufacturing method of a semiconductor device, according to claim 5 , wherein the second film is a semi-conductive oxide film.
7. The manufacturing method of a semiconductor device, according to claim 5 , wherein a ratio of the second metal element to a metal element in the second film is greater than or equal to 0.2.
8. The manufacturing method of a semiconductor device, according to claim 5 , wherein the first film is formed by a DC sputtering method.
9. A manufacturing method of a semiconductor device, comprising the steps of:
forming a first film that contains an oxide including at least a first metal element and a second metal element, over a substrate;
heating the first film to form a first layer that contains a crystal of an oxide including the first metal element as a main metal component and a second layer that is on a side closer to the substrate than the first layer and contains an oxide including the second metal element as a main metal component;
forming a second film that is in contact with the first layer and contains an oxide;
forming a third film from the first layer and the second film by heating the first layer and the second film; and
etching the third film and the second layer.
10. The manufacturing method of a semiconductor device, according to claim 9 , wherein the second film is a semi-conductive oxide film.
11. The manufacturing method of a semiconductor device, according to claim 9 , wherein a ratio of the second metal element to a metal element in the second film is greater than or equal to 0.2.
12. The manufacturing method of a semiconductor device, according to claim 9 , wherein the first film is formed by a DC sputtering method.