Plasma processor
This invention includes a first filter ( 27 ) connected between a susceptor ( 21 ) and ground and having a variable impedance, a sensor ( 28 ) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber ( 11 ), and a control means ( 36 ) for controlling the impedance of the first filter ( 27 ) on the basis of a detection result output from the sensor ( 28 ). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.
1. A plasma processing apparatus comprising:
a lower electrode arranged in a hermetic process chamber and having a support surface for placing a target object thereon,
an upper electrode arranged in the hermetic process chamber and opposing the support surface of said lower electrode,
an RF power supply coupled to the lower electrode,
a first filter connected between said upper electrode and ground and having variable circuit characteristics,
a sensor provided on an upper electrode side and which detects at least one of a voltage impressed upon said first filter based on plasma generated in the process chamber and a current flowed to said first filter based on plasma generated in the process chamber, and
a controller operatively configured to control the circuit characteristics of said first filter on the basis of a detection result output from said sensor, such that when the reactance of the first filter is changed the impedance of a first path extending from the lower electrode to the ground through the upper electrode and the filter can be adjusted as per state of the plasma including changes in ion sheath reactance, wherein
said controller is configured to select a first control mode of maximizing the plasma distributed in a region opposing the support surface of said lower electrode and a second control mode of maximizing the plasma reaching an inner wall surface of said process chamber, in a multilevel manner or arbitrarily, and
the controller is operatively configured to control the reactance of said first filter according to a resonance frequency of the first path.
2. A plasma processing apparatus according to claim 1 , wherein said controller alternately selects from among a plurality of control modes, thus realizing a predetermined plasma distribution corresponding to each of the control modes in said process chamber.
3. A plasma processing apparatus according to claim 2 , wherein said controller changes the circuit characteristics of said first filter during a process.
4. A plasma processing apparatus according to claim 1 , wherein said sensor detects a value of the current flowing through said first filter, and said controller controls in such a direction that the value of the current increases if the first control mode is selected, and controls in such a direction that the value of the current decreases if the second control mode is selected.
5. A plasma processing apparatus according to claim 1 , wherein said sensor detects a value of the voltage applied to said first filter, and said controller controls in such a direction that the value of the voltage decreases if the first control mode is selected, and controls in such a direction that the value of the voltage increases if the second control mode is selected.
6. A plasma processing apparatus according to claim 1 , wherein said controller controls the circuit characteristics of said first filter when the first control mode is selected differently than when the second control mode is selected.
7. A plasma processing apparatus according to claim 1 , wherein said controller controls the reactance of said first filter in combination with capacitance control of a matching circuit.
8. A plasma processing apparatus according to claim 1 , wherein said controller appropriately controls the circuit characteristics of said first filter such that occurrence of abnormal discharge in said process chamber is suppressed.
9. A plasma processing apparatus according to claim 1 , wherein said first filter has a first module for blocking a DC component from passing therethrough, and a second module with a variable circuit constant against a frequency of the AC electric field.
10. A plasma processing apparatus according to claim 1 , wherein said first control mode is selected when an etching process is performed and said second control mode is selected when a cleaning process is performed.
11. A plasma processing apparatus according to claim 1 , wherein said controller obtains a phase difference between the voltage and the current detected by said sensor and controls at least one of said variable circuit characteristics based on the phase difference obtained.
12. A plasma processing apparatus according to claim 1 , wherein said controller obtains a power consumption value based on the voltage and the current detected by said sensor and controls the circuit characteristics of said first filter based on the power consumption value obtained.
13. A plasma processing apparatus comprising:
a lower electrode arranged in a hermetic process chamber and having a support surface for placing a target object thereon,
an upper electrode arranged in the hermetic process chamber and opposing the support surface of said lower electrode,
an RF power supply coupled to the lower electrode,
a first filter connected between the upper electrode and ground and having variable circuit characteristics,
a sensor provided on an upper electrode side and which detects at least one of a voltage impressed upon said first filter based on plasma generated in the process chamber and a current flowed to said first filter based on plasma generated in the process chamber, and
a controller operatively configured to control the circuit characteristics of said first filter on the basis of a detection result output from said sensor and to change the circuit characteristics of said first filter depending on whether the apparatus is in an etching process or a cleaning process, such that when the reactance of the first filter is changed the impedance of a first path extending from the lower electrode to the ground through the upper electrode and the filter can be adjusted as per state of the plasma including changes in ion sheath reactance, wherein
said first filter has a first module consisting of an electric element for blocking a DC component from passing therethrough, and a second module with a variable circuit constant against a frequency of an RF field,
said controller is configured to select a first control mode of maximizing the plasma distributed in a region opposing the support surface of said lower electrode and a second control mode of maximizing the plasma reaching an inner wall surface of said process chamber when the apparatus is respectively in the etching process and the cleaning process, and
the controller is operatively configured to control the reactance of said first filter according to a resonance frequency of the first path.
14. A plasma processing apparatus according to claim 13 , wherein said controller alternately selects from among a plurality of control modes, thus realizing a predetermined plasma distribution corresponding to each of the control modes in said process chamber.
15. A plasma processing apparatus according to claim 14 , wherein said sensor detects a value of the current flowing through said first filter, and said controller controls in such a direction that the value of the current increases if a first control mode is selected, and controls in such a direction that the value of the current decreases if a second control mode is selected.
16. A plasma processing apparatus according to claim 14 , wherein said sensor detects a value of the voltage applied to said first filter, and said controller controls in such a direction that the value of the voltage decreases if a first control mode is selected, and controls in such a direction that the value of the voltage increases if a second control mode is selected.
17. A plasma processing apparatus according to claim 13 , wherein said controller changes the circuit characteristics of said first filter during a process.
18. A plasma processing apparatus according to claim 13 , wherein said controller controls the reactance of said first filter in combination with capacitance control of a matching circuit.
19. A plasma processing apparatus according to claim 13 , wherein said controller appropriately controls the circuit characteristics of said first filter such that occurrence of abnormal discharge in said process chamber is suppressed.